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3rd IEEE International Conference on Group IV Photonics, 2006.最新文献

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Waveguide-Integrated Ge p-i-n Photodetectors on SOI Platform 基于SOI平台的波导集成锗p-i-n光电探测器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708203
J. Liu, D. Pan, S. Jongthammanurak, D. Ahn, C. Hong, M. Beals, L. Kimerling, J. Michel, A. Pomerene, C. Hill, M. Jaso, K. Tu, Y. Chen, S. Patel, M. Rasras, A. White, D. Gill
{"title":"Waveguide-Integrated Ge p-i-n Photodetectors on SOI Platform","authors":"J. Liu, D. Pan, S. Jongthammanurak, D. Ahn, C. Hong, M. Beals, L. Kimerling, J. Michel, A. Pomerene, C. Hill, M. Jaso, K. Tu, Y. Chen, S. Patel, M. Rasras, A. White, D. Gill","doi":"10.1109/GROUP4.2006.1708203","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708203","url":null,"abstract":"We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at lambda=1520 nm, and a 3 dB bandwidth of >4.5 GHz measured at lambda=1550 nm","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130410655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Interlaced Coupled-Cavity Waveguide in Photonic Crystal for Low Group Velocity and High Bit-Rate Applications 低群速高比特率光子晶体交错耦合腔波导
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708166
A. Shroff, P. Fauchet
{"title":"Interlaced Coupled-Cavity Waveguide in Photonic Crystal for Low Group Velocity and High Bit-Rate Applications","authors":"A. Shroff, P. Fauchet","doi":"10.1109/GROUP4.2006.1708166","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708166","url":null,"abstract":"Slow-light devices are important for commercial implementation of active integrated silicon photonics. Design of an interlaced coupled-cavity photonic crystal waveguide with maximum usable bandwidth above 400 Gbits/s and group velocity below 0.004c is reported","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"242 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121317960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
All-Optical Wavelength Conversion using Silicon Photonic Wire Waveguide 利用硅光子线波导的全光波长转换
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708225
K. Yamada, H. Fukuda, T. Watanabe, T. Tsuchizawa, H. Shinojima, T. Tanabe, M. Takahashi, S. Itabashi
{"title":"All-Optical Wavelength Conversion using Silicon Photonic Wire Waveguide","authors":"K. Yamada, H. Fukuda, T. Watanabe, T. Tsuchizawa, H. Shinojima, T. Tanabe, M. Takahashi, S. Itabashi","doi":"10.1109/GROUP4.2006.1708225","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708225","url":null,"abstract":"We demonstrate two types of all-optical wavelength conversion devices using nonlinear optical effects in silicon photonic wire waveguides. One is based on cross-absorption modulation using two-photon absorption (TPA). The other is based on four-wave mixing and gives an internal conversion efficiency of about -11 dB. Conversion performances in both devices are degraded by free-carrier absorption (FCA) originating from the TPA. To eliminate FCA, we propose some techniques including lattice-defect implantations to reduce carrier lifetime","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129882946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
VCSEL Integration for Silicon Photonics 硅光子学VCSEL集成
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708210
F. Koyama
{"title":"VCSEL Integration for Silicon Photonics","authors":"F. Koyama","doi":"10.1109/GROUP4.2006.1708210","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708210","url":null,"abstract":"We review the recent progress of VCSEL photonics, which includes uncooled long wavelength VCSELs, wavelength engineering and new coupling scheme for Si wafer platforms. High density VCSEL array and chip-scale WDM integration will be discussed","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131004752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
All-Optical MZI XOR Logic Gate based on Si Slot Waveguides Filled by Si-nc Embedded in SiO2 基于硅-nc填充硅槽波导的全光MZI异或逻辑门
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708172
P. Sanchis, F. Cuesta-Soto, J. Blasco, J. García, A. Martínez, J. Marti, F. Riboli, Lorenzo Pavesi
{"title":"All-Optical MZI XOR Logic Gate based on Si Slot Waveguides Filled by Si-nc Embedded in SiO2","authors":"P. Sanchis, F. Cuesta-Soto, J. Blasco, J. García, A. Martínez, J. Marti, F. Riboli, Lorenzo Pavesi","doi":"10.1109/GROUP4.2006.1708172","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708172","url":null,"abstract":"An all-optical XOR logic gate based on a Mach-Zehnder interferometer is proposed and analyzed. It is implemented with silicon slot waveguides filled with silicon nanocrystals embedded in silica, which show a high nonlinear Kerr effect","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130988177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Multispectral 1-D Photonic Crystal Photodetector 多光谱一维光子晶体光电探测器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708190
X.C. Sun, J.J. Hu, C. Hong, J. Viens, R. Das, A. Agarwal, L. Kimerling
{"title":"Multispectral 1-D Photonic Crystal Photodetector","authors":"X.C. Sun, J.J. Hu, C. Hong, J. Viens, R. Das, A. Agarwal, L. Kimerling","doi":"10.1109/GROUP4.2006.1708190","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708190","url":null,"abstract":"We demonstrate a novel photoconductor pixel, by using a photonic crystal structure incorporating photoconductive layers, which exploits resonant cavity enhancement to provide us with multispectral capability, high quantum efficiency, and dramatically suppressed shot noise","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133409936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Printed Circuit Board (O-PCB) as an Inter-Chip Optical Interconnection Platform 光学印刷电路板(O-PCB)作为芯片间光互连平台
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708230
El-Hang Lee
{"title":"Optical Printed Circuit Board (O-PCB) as an Inter-Chip Optical Interconnection Platform","authors":"El-Hang Lee","doi":"10.1109/GROUP4.2006.1708230","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708230","url":null,"abstract":"We report on the original design and fabrication of optical printed circuit boards (O-PCBs), which we use as inter-chip optical interconnection platform to integrate micro/nano-photonic devices/circuits made of silicon, photonic crystals, and plasmonic structures","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114779743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SOI Optical Switch Matrix Integrated with Spot Size converter (SSC) and Total Internal Reflection (TIR) Mirrors 集成光斑大小转换器(SSC)和全内反射镜(TIR)的SOI光开关矩阵
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708185
Jinzhong Yu, Shaowu Chen, Zhiyong Li, Yuanyuan Chen, Yun-tao Li, Yanping Li, Jingwei Liu, Di Yang
{"title":"SOI Optical Switch Matrix Integrated with Spot Size converter (SSC) and Total Internal Reflection (TIR) Mirrors","authors":"Jinzhong Yu, Shaowu Chen, Zhiyong Li, Yuanyuan Chen, Yun-tao Li, Yanping Li, Jingwei Liu, Di Yang","doi":"10.1109/GROUP4.2006.1708185","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708185","url":null,"abstract":"SOI (Silicon on Insulator) based photonic devices has attracted more and more attention in the recent years. Integration of SOI optical switch matrix with isolating grooves, total internal reflection (TIR) mirrors and spot size converter (SSC) was studied. A folding re-arrangeable non-blocking 4times4 optical switch matrix and a blocking 16times16 matrix with TIR mirrors and SSC were fabricated on SOI wafer. The performances, including extinction ratio and the crosstalk, are better than before. The insertion loss and the polarization dependent loss (PDL) at 1.55mum increase slightly with longer device length, more bend and intersecting waveguides. The insertion losses decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1mus and 2.3mus, respectively","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122210002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Corrugated SOI Waveguide for Optimal Slow-Light Elements 最佳慢光元件的波纹SOI波导
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708183
J. García, P. Sanchis, A. Martínez, F. Cuesta-Soto, J. Blasco, A. Griol, J. Marti
{"title":"Corrugated SOI Waveguide for Optimal Slow-Light Elements","authors":"J. García, P. Sanchis, A. Martínez, F. Cuesta-Soto, J. Blasco, A. Griol, J. Marti","doi":"10.1109/GROUP4.2006.1708183","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708183","url":null,"abstract":"We present the design and fabrication of a 1D periodic structure based on a conventional SOI waveguide with transversal corrugations. This structure is proposed as an optimal slow-light element working around 1550 nm","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123463442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An Integrated Optical Receiver in MS/RF CMOS Process 一种MS/RF CMOS工艺集成光接收机
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708174
Hai-jun Liu, Xingsheng Xu, L. Mao, Peng Gao, Hongda Chen
{"title":"An Integrated Optical Receiver in MS/RF CMOS Process","authors":"Hai-jun Liu, Xingsheng Xu, L. Mao, Peng Gao, Hongda Chen","doi":"10.1109/GROUP4.2006.1708174","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708174","url":null,"abstract":"A monolithically integrated optoelectronic receiver was realized utilizing a deep sub-micron MS/RF CMOS process. Novel photo-diode with STI and highspeed receiver circuit were designed. This OEIC takes advantage of several new features to improve the performance","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123332446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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