集成光斑大小转换器(SSC)和全内反射镜(TIR)的SOI光开关矩阵

Jinzhong Yu, Shaowu Chen, Zhiyong Li, Yuanyuan Chen, Yun-tao Li, Yanping Li, Jingwei Liu, Di Yang
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引用次数: 1

摘要

近年来,基于绝缘体上硅(Silicon on Insulator)的光子器件越来越受到人们的关注。研究了SOI光开关矩阵与隔离槽、全内反射镜和光斑尺寸转换器的集成。在SOI硅片上制备了可折叠可重新排列的无阻塞4倍4光开关矩阵和带TIR反射镜和SSC的阻塞16倍16光开关矩阵。在消光比、相声等性能上都比以前有所提高。器件长度越长,波导弯曲和相交越多,插入损耗和偏振相关损耗(PDL)在1.55 μ m处略有增加。在器件端部加入增透膜后,插入损耗降低2 ~ 3 dB。器件的上升和下降时间分别为2.1mus和2.3mus
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SOI Optical Switch Matrix Integrated with Spot Size converter (SSC) and Total Internal Reflection (TIR) Mirrors
SOI (Silicon on Insulator) based photonic devices has attracted more and more attention in the recent years. Integration of SOI optical switch matrix with isolating grooves, total internal reflection (TIR) mirrors and spot size converter (SSC) was studied. A folding re-arrangeable non-blocking 4times4 optical switch matrix and a blocking 16times16 matrix with TIR mirrors and SSC were fabricated on SOI wafer. The performances, including extinction ratio and the crosstalk, are better than before. The insertion loss and the polarization dependent loss (PDL) at 1.55mum increase slightly with longer device length, more bend and intersecting waveguides. The insertion losses decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1mus and 2.3mus, respectively
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