{"title":"Silicon Electro-Optic Switches using Microring Resonators with Phase-Tunable Feedback","authors":"Linjie Zhou, A. Poon","doi":"10.1109/GROUP4.2006.1708227","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708227","url":null,"abstract":"We report a silicon electro-optic switch using a microring resonator with phase-tunable feedback. We show a wide mode spacing of four-times the ring free-spectral range. The carrier-induced blue-shifted resonance maintains a high extinction ratio","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125981111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High Performance Quantum-Dot Lasers on Silicon - Challenges and Future Prospects","authors":"P. Bhattacharya, Z. Mi, J. Yang","doi":"10.1109/GROUP4.2006.1708214","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708214","url":null,"abstract":"We report the growth and characteristics of high performance self-organized InGaAs/GaAs quantum dot lasers on silicon. The devices exhibit low threshold current (J<sub>th</sub>~900 A/cm<sup>2</sup>), high output power (~150 mW), and large characteristic temperature (T<sub>0</sub>=244 K)","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131848055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Timotijevic, G. Reed, R. Jones, A. Michaeli, A. Liu, G. Mashanovich
{"title":"Small Optical Filters in Silicon-on-Insulator","authors":"B. Timotijevic, G. Reed, R. Jones, A. Michaeli, A. Liu, G. Mashanovich","doi":"10.1109/GROUP4.2006.1708153","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708153","url":null,"abstract":"Single mode, polarisation independent filters with large free spectral range are basic requirements for optical networks. In this paper we discuss (with experimental results) the possibility of establishing such devices upon small strip waveguides in silicon-on-insulator (SOI)","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132129956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Low-Capacitance Integrated Silicon Finger Photodetector","authors":"W. Gaberl, H. Zimmermann","doi":"10.1109/GROUP4.2006.1708186","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708186","url":null,"abstract":"Results of a low capacitance design for integrated silicon photodiodes are presented. The diodes use n+-doped finger cathodes as well as p+-fingers. With this design it is possible to lower the capacitance compared to homogenous photodiodes (vertical PIN photodiode structure). Low capacitances are reached even at low bias voltages of around 2 V. The diodes reach a responsivity of R=0.24A/W (0.45A/W) at a wavelength of 410 nm (660 nm). The diode design aims at applications where maximum sensitivity, i.e. lowest noise, and therefore low photodiode capacitance is needed. The photodiodes were realized in a 0.6mum BiCMOS process","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117174944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Tu, Y. Chen, A. Leven, M. Rasras, D. Gill, S. S. Patel, A. E. White, D. Carothers, A. Pomerene, M. Grove, D. Sparacin, J. Michel, M. Beals, L. Kimerling
{"title":"Analog RF Performance of a CMOS Optical Filter","authors":"K. Tu, Y. Chen, A. Leven, M. Rasras, D. Gill, S. S. Patel, A. E. White, D. Carothers, A. Pomerene, M. Grove, D. Sparacin, J. Michel, M. Beals, L. Kimerling","doi":"10.1109/GROUP4.2006.1708211","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708211","url":null,"abstract":"We have used an integrated narrowband optical filter fabricated in 0.18 micron CMOS process to optically slice a modulated broadband RF signal into an individual channel of 1 GHz bandwidth. The detected channel signal has an in-band spur-free dynamic range (SFDR) of 88 dBmiddotHz2/3 and greater than 28 dB rejection of out-of-band signal","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115524479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fabrication and Characterization of Two-Dimensional Photonic Crystal on Silicon by Efficient Methods","authors":"Xingsheng Xu, Chunxia Wang, Fang Li, G. Xiong, Yuliang Liu, Hongda Chen","doi":"10.1109/GROUP4.2006.1708168","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708168","url":null,"abstract":"Two-dimensional photonic crystals working in near infrared region are fabricated into silicon-on-insulator wafer by 248-nm deep UV lithography. We present an efficient way to measure the photonic crystal waveguide's light transmission spectra at given polarization states","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115718161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"In-Plane Photonic Transduction of SOI Microcantilever Sensors","authors":"G. Nordin, S. Kim, Y. Qian, J. Noh, J. Jiang","doi":"10.1109/GROUP4.2006.1708146","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708146","url":null,"abstract":"In this paper, a new microcantilever transduction mechanism for silicon-on-insulator (SOI) microcantilevers that readily scales to large arrays while maintaining a very compact form factor and high sensitivity is introduced. This mechanism is based on differential optical detection of the cantilever tip position in which the cantilever itself forms a single mode optical ridge waveguide differential splitter.","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"59 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121001220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Fage-Pedersen, L. Frandsen, A. Lavrinenko, P. Borel
{"title":"A Linear Electrooptic Effect in Silicon, Induced by Use of Strain","authors":"J. Fage-Pedersen, L. Frandsen, A. Lavrinenko, P. Borel","doi":"10.1109/GROUP4.2006.1708157","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708157","url":null,"abstract":"The crystal structure in a silicon waveguide can be distorted by application of strain. Thereby, the otherwise forbidden linear electrooptic (Pockels) effect is induced, opening a new route for optical modulation in silicon","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121512937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhancement of Fowler-Nordheim Tunneling Based Light Emission from metal-SiOx-Si MOSLED","authors":"Gong-Ru Lin, Chun-Jung Lin","doi":"10.1109/GROUP4.2006.1708219","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708219","url":null,"abstract":"PECVD grown nanocrystallite Si structure at SiOx/Si interface has been demonstrated to show its capability in enhancing the surface roughness and the Fowler-Nordheim tunneling based carrier injection for improved light emission from a metal-SiOx-Si MOSLED","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131273190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Cheng, Chuanbo Li, R. Mao, Fei Yao, C. Xue, Jianguo Zhang, W. Shi, Y. Zuo, Jinzhong Yu, Qiming Wang
{"title":"Silicon-based Resonant-Cavity-Enhanced Photodetectors","authors":"B. Cheng, Chuanbo Li, R. Mao, Fei Yao, C. Xue, Jianguo Zhang, W. Shi, Y. Zuo, Jinzhong Yu, Qiming Wang","doi":"10.1109/GROUP4.2006.1708206","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708206","url":null,"abstract":"Silicon-based resonant-cavity-enhanced photodetectors (RCE-PD) with Si, Ge islands and InGaAs as absorption materials were introduced, respectively. The Ge islands and Si RCE-PD had a membrane structure and the Si-based InGaAs RCE-PDs were fabricated by bonding technology","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126341873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}