Enhancement of Fowler-Nordheim Tunneling Based Light Emission from metal-SiOx-Si MOSLED

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708219

Gong-Ru Lin, Chun-Jung Lin

引用次数: 0

Abstract

PECVD grown nanocrystallite Si structure at SiOx/Si interface has been demonstrated to show its capability in enhancing the surface roughness and the Fowler-Nordheim tunneling based carrier injection for improved light emission from a metal-SiOx-Si MOSLED

查看原文本刊更多论文

增强金属- siox - si MOSLED的Fowler-Nordheim隧穿发光

在SiOx/Si界面上，PECVD生长的纳米晶Si结构已经被证明具有增强表面粗糙度的能力，并且基于Fowler-Nordheim隧道的载流子注入可以改善金属-SiOx-Si MOSLED的光发射

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

3rd IEEE International Conference on Group IV Photonics, 2006.

自引率

0.00%

发文量