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3rd IEEE International Conference on Group IV Photonics, 2006.最新文献

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Composition and Strain of Coherent Si 1-x Ge x Islands on Si Si上相干Si -x Ge -x岛的组成和应变
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708170
D. J. Lockwood, X. Wu, J. Baribeau
{"title":"Composition and Strain of Coherent Si 1-x Ge x Islands on Si","authors":"D. J. Lockwood, X. Wu, J. Baribeau","doi":"10.1109/GROUP4.2006.1708170","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708170","url":null,"abstract":"In this paper, the study of alloy composition on SiGe island growth by MBE under similar conditions has shown that the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117054894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon Electronic Photonic Integrated Circuits for High Speed Analog to Digital Conversion 用于高速模数转换的硅电子光子集成电路
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708213
F. Kartner, R. Amataya, G. Barbastathis, H. Byun, F. Gan, C. Holzwarth, J. Hoyt, E. Ippen, O. Olubuyide, J. Orcutt, M. Park, M. Perrott, M. Popović, P. Rakich, Rajeev J Ram, H. Smith, M. Geis, M. Grein, T. Lyszczarz, S. Spector, J. Yoon
{"title":"Silicon Electronic Photonic Integrated Circuits for High Speed Analog to Digital Conversion","authors":"F. Kartner, R. Amataya, G. Barbastathis, H. Byun, F. Gan, C. Holzwarth, J. Hoyt, E. Ippen, O. Olubuyide, J. Orcutt, M. Park, M. Perrott, M. Popović, P. Rakich, Rajeev J Ram, H. Smith, M. Geis, M. Grein, T. Lyszczarz, S. Spector, J. Yoon","doi":"10.1109/GROUP4.2006.1708213","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708213","url":null,"abstract":"Integrated optical components on the silicon platform and optically enhanced electronic sampling circuits are demonstrated that enable the fabrication of a variety of electronic-photonic A/D converter chips surpassing currently available technology in sampling speed and resolution","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"46 25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130615262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Visible Lasing on Si using Rare Earth Doped GaN 稀土掺杂氮化镓在硅上的可见激光
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708215
A. Steckl, J. Park
{"title":"Visible Lasing on Si using Rare Earth Doped GaN","authors":"A. Steckl, J. Park","doi":"10.1109/GROUP4.2006.1708215","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708215","url":null,"abstract":"Our approach is to achieve a versatile Si-based laser system using rare earth doped GaN grown on Si substrates. The current understanding of rare earth lasing sites in GaN, the intimate relationship between materials growth, properties and resulting laser performance. The success of this approach will result in the availability of laser light sources directly built on Si substrates and operating at wavelengths throughout the visible and near-IR range. The prospects and challenges for electrically pumped injection GaN:RE lasers are considered along with potential applications","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126614402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Light Emitting Silicon Nanowires for Photonic Device Applications 用于光子器件的发光硅纳米线
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708191
A. Guichard, M. Brongersma, T. Kamins, S. Sharma
{"title":"Light Emitting Silicon Nanowires for Photonic Device Applications","authors":"A. Guichard, M. Brongersma, T. Kamins, S. Sharma","doi":"10.1109/GROUP4.2006.1708191","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708191","url":null,"abstract":"Si nanowires grown from TiSi2 catalysts exhibit near-infrared photoluminescence (PL) from quantum-confined excitons in the Si. Temperature dependent studies highlight the differences between Si nanocrystals and nanowires, which allow for exciton diffusion","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121173580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Studies of Dispersion Properties of SOI Photonic Nanowires SOI光子纳米线色散特性的数值研究
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708197
Xiaogang Chen, L. Cao, N. Panoiu, R. Osgood, R. Scarmozzino
{"title":"Numerical Studies of Dispersion Properties of SOI Photonic Nanowires","authors":"Xiaogang Chen, L. Cao, N. Panoiu, R. Osgood, R. Scarmozzino","doi":"10.1109/GROUP4.2006.1708197","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708197","url":null,"abstract":"We present a numerical study of dispersion properties of silicon-on-insulator photonic nanowires. We demonstrate that the effective index, group index, and second-order dispersion coefficient are determined by the waveguide geometry and can be strongly engineered","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114825506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Subwavelength Waveguide Grating Coupler 亚波长波导光栅耦合器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708193
P. Cheben, D. Xu, S. Janz, A. Densmore
{"title":"Subwavelength Waveguide Grating Coupler","authors":"P. Cheben, D. Xu, S. Janz, A. Densmore","doi":"10.1109/GROUP4.2006.1708193","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708193","url":null,"abstract":"We propose a new method for waveguide mode transformation and coupling between an optical fiber and a sub-micrometer waveguide. The method is based on mode effective index modification by a subwavelength grating and it is demonstrated by FDTD simulations of coupling between an SMF-28 fiber and a thin SOI waveguide","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115813447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiGe and Si Optical Modulators SiGe和Si光调制器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708155
E. Cassan, D. Marris-Morini, L. Vivien, S. Maine, D. Pascal, S. Laval, J. Fédéli
{"title":"SiGe and Si Optical Modulators","authors":"E. Cassan, D. Marris-Morini, L. Vivien, S. Maine, D. Pascal, S. Laval, J. Fédéli","doi":"10.1109/GROUP4.2006.1708155","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708155","url":null,"abstract":"Modulation-doped SiGe-Si multiple quantum well and all-silicon modulators embedded in reverse biased PIN junctions and integrated in SOI waveguides are described. Experimental evidence for electrorefractive effect is presented, and frequency operation is investigated","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115412624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-ns Dynamics of nc-Si QDs in SiNx Matrix Grown by PECVD PECVD生长的SiNx矩阵中nc-Si量子点的亚ns动力学
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708182
Jae‐heon Shin, K. Cho, C. Huh, K.H. Kim, J. Hong, G. Sung, Y.D. Chang, D.H. Lee, Y. Cho
{"title":"Sub-ns Dynamics of nc-Si QDs in SiNx Matrix Grown by PECVD","authors":"Jae‐heon Shin, K. Cho, C. Huh, K.H. Kim, J. Hong, G. Sung, Y.D. Chang, D.H. Lee, Y. Cho","doi":"10.1109/GROUP4.2006.1708182","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708182","url":null,"abstract":"Time-resolved PL characteristic of the nc-Si QDs in SiNx matrix grown by PECVD is studied. The measured PL lifetime of nc-Si QDs is about 0.43 ns","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130015200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient Raman Amplification in Cladding-Pumped Silicon Waveguides 包层泵浦硅波导中的高效拉曼放大
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708165
M. Krause, H. Renner, E. Brinkmeyer
{"title":"Efficient Raman Amplification in Cladding-Pumped Silicon Waveguides","authors":"M. Krause, H. Renner, E. Brinkmeyer","doi":"10.1109/GROUP4.2006.1708165","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708165","url":null,"abstract":"In this paper, we showed that the maximum achievable total gain of silicon Raman amplifiers can be significantly increased by injecting the pump power into a surrounding cladding instead of directly into the silicon core. The underlying principle is that the pump power is guided primarily in an optically linear cladding surrounding the silicon core and thus propagates relatively unimpaired by free-carrier absorption. This permits longer amplifier lengths and higher pump powers, which leads to a larger possible total gain","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127297867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Heterogeneous Integration of III-V Photodetectors and Laser Diodes on Silicon-on-Insulator Waveguide Circuits III-V型光电探测器和激光二极管在绝缘体上硅波导电路上的非均匀集成
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708208
G. Roelkens, J. Brouckaert, S. Verstuyft, J. Schrauwen, D. van Thourhout, R. Baets
{"title":"Heterogeneous Integration of III-V Photodetectors and Laser Diodes on Silicon-on-Insulator Waveguide Circuits","authors":"G. Roelkens, J. Brouckaert, S. Verstuyft, J. Schrauwen, D. van Thourhout, R. Baets","doi":"10.1109/GROUP4.2006.1708208","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708208","url":null,"abstract":"InP/InGaAsP photodetectors and lasers were integrated on top of ultra-compact silicon-on-insulator waveguide circuits using benzocyclobutene adhesive bonding. Light is coupled between III-V device and SOI waveguide using an inverted taper","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"52 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120916657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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