{"title":"用于光子器件的发光硅纳米线","authors":"A. Guichard, M. Brongersma, T. Kamins, S. Sharma","doi":"10.1109/GROUP4.2006.1708191","DOIUrl":null,"url":null,"abstract":"Si nanowires grown from TiSi2 catalysts exhibit near-infrared photoluminescence (PL) from quantum-confined excitons in the Si. Temperature dependent studies highlight the differences between Si nanocrystals and nanowires, which allow for exciton diffusion","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Light Emitting Silicon Nanowires for Photonic Device Applications\",\"authors\":\"A. Guichard, M. Brongersma, T. Kamins, S. Sharma\",\"doi\":\"10.1109/GROUP4.2006.1708191\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Si nanowires grown from TiSi2 catalysts exhibit near-infrared photoluminescence (PL) from quantum-confined excitons in the Si. Temperature dependent studies highlight the differences between Si nanocrystals and nanowires, which allow for exciton diffusion\",\"PeriodicalId\":342599,\"journal\":{\"name\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2006.1708191\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd IEEE International Conference on Group IV Photonics, 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2006.1708191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Light Emitting Silicon Nanowires for Photonic Device Applications
Si nanowires grown from TiSi2 catalysts exhibit near-infrared photoluminescence (PL) from quantum-confined excitons in the Si. Temperature dependent studies highlight the differences between Si nanocrystals and nanowires, which allow for exciton diffusion
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