Si上相干Si -x Ge -x岛的组成和应变

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708170

D. J. Lockwood, X. Wu, J. Baribeau

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摘要

本文利用MBE对相似条件下SiGe岛生长的合金成分进行了研究，结果表明，Ge向大岛的中心迁移以保持外延生长，且当Ge成分较高时，其内建应变也较高，获得的结构最为均匀

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Composition and Strain of Coherent Si 1-x Ge x Islands on Si

In this paper, the study of alloy composition on SiGe island growth by MBE under similar conditions has shown that the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher

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3rd IEEE International Conference on Group IV Photonics, 2006.

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