SiGe and Si Optical Modulators

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708155

E. Cassan, D. Marris-Morini, L. Vivien, S. Maine, D. Pascal, S. Laval, J. Fédéli

引用次数: 0

Abstract

Modulation-doped SiGe-Si multiple quantum well and all-silicon modulators embedded in reverse biased PIN junctions and integrated in SOI waveguides are described. Experimental evidence for electrorefractive effect is presented, and frequency operation is investigated

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SiGe和Si光调制器

描述了调制掺杂SiGe-Si多量子阱和嵌入反向偏置PIN结并集成在SOI波导中的全硅调制器。给出了电折射效应的实验证据，并对频率运算进行了研究

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

3rd IEEE International Conference on Group IV Photonics, 2006.

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