{"title":"硅基高性能量子点激光器——挑战与未来展望","authors":"P. Bhattacharya, Z. Mi, J. Yang","doi":"10.1109/GROUP4.2006.1708214","DOIUrl":null,"url":null,"abstract":"We report the growth and characteristics of high performance self-organized InGaAs/GaAs quantum dot lasers on silicon. The devices exhibit low threshold current (J<sub>th</sub>~900 A/cm<sup>2</sup>), high output power (~150 mW), and large characteristic temperature (T<sub>0</sub>=244 K)","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"146 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High Performance Quantum-Dot Lasers on Silicon - Challenges and Future Prospects\",\"authors\":\"P. Bhattacharya, Z. Mi, J. Yang\",\"doi\":\"10.1109/GROUP4.2006.1708214\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the growth and characteristics of high performance self-organized InGaAs/GaAs quantum dot lasers on silicon. The devices exhibit low threshold current (J<sub>th</sub>~900 A/cm<sup>2</sup>), high output power (~150 mW), and large characteristic temperature (T<sub>0</sub>=244 K)\",\"PeriodicalId\":342599,\"journal\":{\"name\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"volume\":\"146 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2006.1708214\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd IEEE International Conference on Group IV Photonics, 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2006.1708214","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Performance Quantum-Dot Lasers on Silicon - Challenges and Future Prospects
We report the growth and characteristics of high performance self-organized InGaAs/GaAs quantum dot lasers on silicon. The devices exhibit low threshold current (Jth~900 A/cm2), high output power (~150 mW), and large characteristic temperature (T0=244 K)
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
