Heterogeneous Integration of III-V Photodetectors and Laser Diodes on Silicon-on-Insulator Waveguide Circuits

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708208

G. Roelkens, J. Brouckaert, S. Verstuyft, J. Schrauwen, D. van Thourhout, R. Baets

引用次数: 12

Abstract

InP/InGaAsP photodetectors and lasers were integrated on top of ultra-compact silicon-on-insulator waveguide circuits using benzocyclobutene adhesive bonding. Light is coupled between III-V device and SOI waveguide using an inverted taper

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III-V型光电探测器和激光二极管在绝缘体上硅波导电路上的非均匀集成

利用苯并环丁烯粘合剂将InP/InGaAsP光电探测器和激光器集成在超紧凑的绝缘体上硅波导电路上。光在III-V器件和SOI波导之间采用倒锥耦合

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

3rd IEEE International Conference on Group IV Photonics, 2006.

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