SiGe和Si光调制器

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708155

E. Cassan, D. Marris-Morini, L. Vivien, S. Maine, D. Pascal, S. Laval, J. Fédéli

{"title":"SiGe和Si光调制器","authors":"E. Cassan, D. Marris-Morini, L. Vivien, S. Maine, D. Pascal, S. Laval, J. Fédéli","doi":"10.1109/GROUP4.2006.1708155","DOIUrl":null,"url":null,"abstract":"Modulation-doped SiGe-Si multiple quantum well and all-silicon modulators embedded in reverse biased PIN junctions and integrated in SOI waveguides are described. Experimental evidence for electrorefractive effect is presented, and frequency operation is investigated","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"128 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SiGe and Si Optical Modulators\",\"authors\":\"E. Cassan, D. Marris-Morini, L. Vivien, S. Maine, D. Pascal, S. Laval, J. Fédéli\",\"doi\":\"10.1109/GROUP4.2006.1708155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Modulation-doped SiGe-Si multiple quantum well and all-silicon modulators embedded in reverse biased PIN junctions and integrated in SOI waveguides are described. Experimental evidence for electrorefractive effect is presented, and frequency operation is investigated\",\"PeriodicalId\":342599,\"journal\":{\"name\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"volume\":\"128 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2006.1708155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd IEEE International Conference on Group IV Photonics, 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2006.1708155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

描述了调制掺杂SiGe-Si多量子阱和嵌入反向偏置PIN结并集成在SOI波导中的全硅调制器。给出了电折射效应的实验证据，并对频率运算进行了研究

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

SiGe and Si Optical Modulators

Modulation-doped SiGe-Si multiple quantum well and all-silicon modulators embedded in reverse biased PIN junctions and integrated in SOI waveguides are described. Experimental evidence for electrorefractive effect is presented, and frequency operation is investigated

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

3rd IEEE International Conference on Group IV Photonics, 2006.

自引率

0.00%

发文量