Visible Lasing on Si using Rare Earth Doped GaN

Abstract

Our approach is to achieve a versatile Si-based laser system using rare earth doped GaN grown on Si substrates. The current understanding of rare earth lasing sites in GaN, the intimate relationship between materials growth, properties and resulting laser performance. The success of this approach will result in the availability of laser light sources directly built on Si substrates and operating at wavelengths throughout the visible and near-IR range. The prospects and challenges for electrically pumped injection GaN:RE lasers are considered along with potential applications