增强金属- siox - si MOSLED的Fowler-Nordheim隧穿发光

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708219

Gong-Ru Lin, Chun-Jung Lin

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引用次数: 0

摘要

在SiOx/Si界面上，PECVD生长的纳米晶Si结构已经被证明具有增强表面粗糙度的能力，并且基于Fowler-Nordheim隧道的载流子注入可以改善金属-SiOx-Si MOSLED的光发射

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Enhancement of Fowler-Nordheim Tunneling Based Light Emission from metal-SiOx-Si MOSLED

PECVD grown nanocrystallite Si structure at SiOx/Si interface has been demonstrated to show its capability in enhancing the surface roughness and the Fowler-Nordheim tunneling based carrier injection for improved light emission from a metal-SiOx-Si MOSLED

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3rd IEEE International Conference on Group IV Photonics, 2006.

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