Silicon-based Resonant-Cavity-Enhanced Photodetectors

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708206

B. Cheng, Chuanbo Li, R. Mao, Fei Yao, C. Xue, Jianguo Zhang, W. Shi, Y. Zuo, Jinzhong Yu, Qiming Wang

引用次数: 0

Abstract

Silicon-based resonant-cavity-enhanced photodetectors (RCE-PD) with Si, Ge islands and InGaAs as absorption materials were introduced, respectively. The Ge islands and Si RCE-PD had a membrane structure and the Si-based InGaAs RCE-PDs were fabricated by bonding technology

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硅基谐振腔增强光电探测器

介绍了以硅、锗岛和InGaAs为吸收材料的硅基谐振腔增强光电探测器(RCE-PD)。Ge岛和Si RCE-PD具有膜结构，采用键合技术制备了Si基InGaAs RCE-PD

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

3rd IEEE International Conference on Group IV Photonics, 2006.

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