基于SOI平台的波导集成锗p-i-n光电探测器

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708203

J. Liu, D. Pan, S. Jongthammanurak, D. Ahn, C. Hong, M. Beals, L. Kimerling, J. Michel, A. Pomerene, C. Hill, M. Jaso, K. Tu, Y. Chen, S. Patel, M. Rasras, A. White, D. Gill

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引用次数: 18

摘要

我们在SOI平台上展示了一个集成了Si波导的全CMOS处理的Ge p-i-n光电探测器，在λ =1520 nm处具有1.0 a /W的高响应率，在λ =1550 nm处测量到>4.5 GHz的3db带宽

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Waveguide-Integrated Ge p-i-n Photodetectors on SOI Platform

We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at lambda=1520 nm, and a 3 dB bandwidth of >4.5 GHz measured at lambda=1550 nm

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3rd IEEE International Conference on Group IV Photonics, 2006.

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