加热:控制等离子体色散调谐SOI波导器件的热效应

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708232

P. Waldron, H. Panesar, N. G. Tarr, T. Smy, P. Jessop

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引用次数: 1

摘要

半导体和热流方程的数值解表明，通过使用最小面积的浅多晶硅接触n+和p+区域，并将这些区域放置在远离波导肋的地方，可以使双极SOI波导器件的快速等离子体色散调谐优于较慢的热光调谐。用等离子体色散调谐马赫曾德尔干涉仪开关的实验结果说明了这种设计方法

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Beating the Heat: Controlling Thermal Effects in Plasma Dispersion Tuned SOI Waveguide Devices

Numerical solution of the semiconductor and heat flow equations is used to show that fast plasma dispersion tuning of bipolar SOI waveguide devices can be made to dominate over slower thermooptic tuning by using shallow, polysilicon-contacted n+ and p+ regions of minimum area, and placing these regions away from the waveguide rib. Experimental results for a plasma dispersion tuned Mach Zehnder interferometer switch are used to illustrate this design approach

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3rd IEEE International Conference on Group IV Photonics, 2006.

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