利用绝缘体上硅光子线的倏逝场传感器

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708145

A. Densmore, D. Xu, P. Waldron, S. Janz, J. Lapointe, P. Cheben, A. Delâge, B. Lamontagne, J. Schmid, E. Post

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引用次数: 3

摘要

报道了一种基于硅光子线波导的绝缘体上硅的倏逝场传感器。利用高折射率对比度和亚微米结构的独特特性，增强了传感器表面附近的电场大小和定位。在Mach - Zehnder结构中演示了倏逝场传感器。

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Evanescent field sensor using silicon-on-insulator photonic wires

A silicon-on-insulator based evanescent field sensor using silicon photonic wire waveguides is reported. The unique properties of high index contrast, submicron structures are exploited to enhance electric field magnitude and localization near the sensor surface. The evanescent field sensor is demonstrated in a Mach Zehnder configuration.

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3rd IEEE International Conference on Group IV Photonics, 2006.

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