基于界面失配阵列的硅基单片无缓冲AlGaSb发射体

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708216

D. Huffaker

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引用次数: 1

摘要

本文讨论了基于90度界面失配自组装阵列(IMF)的Si衬底III-V器件的单片无缓冲方法。这种基于III-Sb的生长方法与之前报道的方法有着根本的不同，因为13%的晶格失配导致的应变能在III-V界面上完全释放，而不是像在Si上的III-As那样四方畸变然后形成缺陷

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Monolithic, Bufferless AlGaSb Emitters on Si based on Interfacial Misfit Arrays

In this paper a monolithic, bufferless approach to III-V devices on Si substrates based on a self-assembled array of 90deg interfacial misfits (IMF) is discussed. This growth method, based on III-Sb, is fundamentally different from previously reported approaches since the strain energy due to the 13% lattice mismatch is fully and immediately relieved at the III-V interface rather than tetragonal distortion followed by defect formation as in III-As on Si

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3rd IEEE International Conference on Group IV Photonics, 2006.

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