低功耗，高速马赫-曾德调制器在硅

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708200

S.J. Specter, T. Lyszczarz, M. Geis, D. Lennon, J. Yoon, M. Grein, R. Schulein, F. Gan, F. Kaertner

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引用次数: 3

摘要

用硅材料制备了高速二极管光调制器。该器件在10-100 MHz范围内实现了0.02 V-cm的极低vpl。在5ghz的100mw输入功率下实现了30%的调制深度

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Low-Power, High-Speed Mach-Zehnder Modulator in Silicon

A high speed diode-based optical modulator has been fabricated in silicon. This device achieves an extremely low VpiL of 0.02 V-cm from 10-100 MHz. Modulation depths of 30% have been achieved at an input power of 100 mW at 5 GHz

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3rd IEEE International Conference on Group IV Photonics, 2006.

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