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3rd IEEE International Conference on Group IV Photonics, 2006.最新文献

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CWDM Transmitter Board based on SOI 基于SOI的CWDM发射机板
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708163
J. Bruns, T. Mitze, M. Schnarrenberger, L. Zimmermann, M. Krieg, J. Kreiss, K. Janiak, T. Hartwich, K. Petermann
{"title":"CWDM Transmitter Board based on SOI","authors":"J. Bruns, T. Mitze, M. Schnarrenberger, L. Zimmermann, M. Krieg, J. Kreiss, K. Janiak, T. Hartwich, K. Petermann","doi":"10.1109/GROUP4.2006.1708163","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708163","url":null,"abstract":"A CWDM transmitter board based on SOI is demonstrated. Active III/V components are integrated using Au/Sn solder technology and passive alignment. Precise mounting of lasers on the board is necessary to ensure low coupling losses","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130159147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-Dependent Analysis of Ge-on-SOI Photodetectors and Receivers 锗-on- soi光电探测器和接收器的温度依赖性分析
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708205
S. Koester, L. Schares, C. Schow, G. Dehlinger, R. John
{"title":"Temperature-Dependent Analysis of Ge-on-SOI Photodetectors and Receivers","authors":"S. Koester, L. Schares, C. Schow, G. Dehlinger, R. John","doi":"10.1109/GROUP4.2006.1708205","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708205","url":null,"abstract":"The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85degC despite a 10x increase in dark current compared to room temperature","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125391763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Dielectric Matrix Influence on the Photoluminescence Properties of Silicon Nanocrystals 介电基质对硅纳米晶体光致发光性能的影响
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708221
L. Ferraioli, M. Cazzanelli, N. Daldosso, V. Mulloni, P. Belluti, S. Yerci, R. Turan, A. Mikhaylov, D. Tetelbaum, Lorenzo Pavesi
{"title":"Dielectric Matrix Influence on the Photoluminescence Properties of Silicon Nanocrystals","authors":"L. Ferraioli, M. Cazzanelli, N. Daldosso, V. Mulloni, P. Belluti, S. Yerci, R. Turan, A. Mikhaylov, D. Tetelbaum, Lorenzo Pavesi","doi":"10.1109/GROUP4.2006.1708221","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708221","url":null,"abstract":"Photoluminescence properties of silicon nanocrystals embedded in five different oxide matrices are analyzed. Samples are silicon rich oxide and oxynitride produced by PECVD and ion implantation and crystalline and amorphous aluminum oxide implanted with silicon","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124772076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High Bandwidth Silicon Ring Resonator Raman Amplifier 高带宽硅环谐振拉曼放大器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708222
Y. Kuo, H. Rong, M. Paniccia
{"title":"High Bandwidth Silicon Ring Resonator Raman Amplifier","authors":"Y. Kuo, H. Rong, M. Paniccia","doi":"10.1109/GROUP4.2006.1708222","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708222","url":null,"abstract":"We report a high bandwidth silicon Raman amplifier using a ring resonator that has high-Q for the pump laser to enhance the intra-cavity power and low-Q for the signal wavelength to ensure high speed amplification","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123295241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Near-infrared Electroluminescence from Multilayered CdF2/CaF2 Quantum Heterostructure Grown on Trench-Patterned Si 沟槽图案硅上生长多层CdF2/CaF2量子异质结构的近红外电致发光
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708188
Keisuke Jinen, Kaoru Uchida, S. Kodaira, M. Watanabe, M. Asada
{"title":"Near-infrared Electroluminescence from Multilayered CdF2/CaF2 Quantum Heterostructure Grown on Trench-Patterned Si","authors":"Keisuke Jinen, Kaoru Uchida, S. Kodaira, M. Watanabe, M. Asada","doi":"10.1109/GROUP4.2006.1708188","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708188","url":null,"abstract":"A CdF<sub>2</sub>/CaF<sub>2</sub> intersubband transition light-emitting structure is fabricated on a trench-patterned Si substrate. Electroluminescence from the device was observed in the near-infrared region","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117026588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization State of Silicon Raman Lasers Dictated by Non-Degenerate Two-Photon Absorption 非简并双光子吸收对硅拉曼激光器偏振态的影响
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708164
E. Tien, O. Boyraz
{"title":"Polarization State of Silicon Raman Lasers Dictated by Non-Degenerate Two-Photon Absorption","authors":"E. Tien, O. Boyraz","doi":"10.1109/GROUP4.2006.1708164","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708164","url":null,"abstract":"In this paper, we demonstrate the polarization state of the silicon Raman lasers dictated by the non-degenerate two-photon absorption (TPA) process. We measure that the lasing in silicon waveguides can be achieved when pump and signal have linear and orthogonal polarization states relative to each other or circular polarization states. Pump-signal TPA increases the loss inside the resonator significantly and does not allow lasing when they have collinear polarization states. We measure the average lasing threshold power to be 12.5 mW for orthogonal polarization states and it is increased by 12% (to 14 mW) by adjusting the pump-signal polarization states to circular polarization. Experimental results reveal that the degenerate TPA will mitigate the higher order Raman lasing in silicon waveguides for wavelengths below 2 mum because of non-degenerate TPA process","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127576491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Large Electro-Optic Effect in Tensile Strained Ge-on-Si Films 拉伸应变锗硅薄膜中的大电光效应
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1063/1.2363948
S. Jongthammanurak, J. Liu, K. Wada, D. Cannon, D. T. Danielson, D. Pan, J. Michel, L. Kimerling
{"title":"Large Electro-Optic Effect in Tensile Strained Ge-on-Si Films","authors":"S. Jongthammanurak, J. Liu, K. Wada, D. Cannon, D. T. Danielson, D. Pan, J. Michel, L. Kimerling","doi":"10.1063/1.2363948","DOIUrl":"https://doi.org/10.1063/1.2363948","url":null,"abstract":"We report the observation of an enhanced electro-optic effect in the weakly absorbing regime for tensile strained Ge epitaxial films. With Deltan/F=260 pm/V and Deltaalpha/alpha-3 the material has significant potential for field-induced phase or electro-absorption modulator devices","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123542774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 73
A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDs Si-nc基mos - led注入、输运和激发机制的表征
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708192
C. Kompocholis, G. Pucker, P. Bellutti, A. Lui, L. Vanzetti, M. Bersani, M. Anderle, S. Prezioso, Z. Gaburro, Lorenzo Pavesi
{"title":"A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDs","authors":"C. Kompocholis, G. Pucker, P. Bellutti, A. Lui, L. Vanzetti, M. Bersani, M. Anderle, S. Prezioso, Z. Gaburro, Lorenzo Pavesi","doi":"10.1109/GROUP4.2006.1708192","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708192","url":null,"abstract":"We study the effect on a LED of a controlled insertion of N in Si oxide containing Si nanocrystals. Nitrogen lowers the electronic potential barrier, thus increasing the carrier injection. Electroluminescence spectroscopy suggests that both electron and hole injection can be observed","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125004441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Non-Linear Optical Properties of Si Nanocrystals 硅纳米晶体的非线性光学性质
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1557/PROC-0958-L08-06
M. Cazzanelli, R. Spano, N. Daldosso, Z. Gaburro, S. Hernández, Y. Lebour, P. Pellegrino, B. Garrido, E. Jordana, J. Fédéli, Lorenzo Pavesi
{"title":"Non-Linear Optical Properties of Si Nanocrystals","authors":"M. Cazzanelli, R. Spano, N. Daldosso, Z. Gaburro, S. Hernández, Y. Lebour, P. Pellegrino, B. Garrido, E. Jordana, J. Fédéli, Lorenzo Pavesi","doi":"10.1557/PROC-0958-L08-06","DOIUrl":"https://doi.org/10.1557/PROC-0958-L08-06","url":null,"abstract":"Nonlinear optical refraction and absorption have been measured on Si nanocrystals grown by plasma-enhanced- chemical-vapour-deposition. Strong nonlinearities were found at 830 nm and at 1552 nm. Different behaviours, depending on the pump-pulse duration, have been observed","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117299570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Bright Green Visible Electroluminescence from Rare Earth Doped Silicon Rich SiOx 稀土掺杂富硅SiOx的亮绿色可见电致发光
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708218
T. MacElwee, S. Hill, S. Campbell, D. Ducharme, B.A. Ruoux, I. Calder, M. Flynn, J. Wójcik, S. Gujrathi, P. Mascher
{"title":"Bright Green Visible Electroluminescence from Rare Earth Doped Silicon Rich SiOx","authors":"T. MacElwee, S. Hill, S. Campbell, D. Ducharme, B.A. Ruoux, I. Calder, M. Flynn, J. Wójcik, S. Gujrathi, P. Mascher","doi":"10.1109/GROUP4.2006.1708218","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708218","url":null,"abstract":"Silicon rich silicon oxide was deposited by ECR-PECVD, doped with Er or Tb, and processed into device structures. Electrical measurements were used to characterize conduction mechanisms while spectroscopic electroluminescence provided information on brightness and mechanisms","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126289760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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