A Characterization of Injection, Transport an Excitation Mechanisms in Si-nc based MOS-LEDs

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708192

C. Kompocholis, G. Pucker, P. Bellutti, A. Lui, L. Vanzetti, M. Bersani, M. Anderle, S. Prezioso, Z. Gaburro, Lorenzo Pavesi

引用次数: 1

Abstract

We study the effect on a LED of a controlled insertion of N in Si oxide containing Si nanocrystals. Nitrogen lowers the electronic potential barrier, thus increasing the carrier injection. Electroluminescence spectroscopy suggests that both electron and hole injection can be observed

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Si-nc基mos - led注入、输运和激发机制的表征

我们研究了在含有硅纳米晶体的氧化硅中控制氮的插入对LED的影响。氮降低了电子势垒，从而增加了载流子注入。电致发光光谱表明，可以观察到电子和空穴注入

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

3rd IEEE International Conference on Group IV Photonics, 2006.

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