Keisuke Jinen, Kaoru Uchida, S. Kodaira, M. Watanabe, M. Asada
{"title":"沟槽图案硅上生长多层CdF2/CaF2量子异质结构的近红外电致发光","authors":"Keisuke Jinen, Kaoru Uchida, S. Kodaira, M. Watanabe, M. Asada","doi":"10.1109/GROUP4.2006.1708188","DOIUrl":null,"url":null,"abstract":"A CdF<sub>2</sub>/CaF<sub>2</sub> intersubband transition light-emitting structure is fabricated on a trench-patterned Si substrate. Electroluminescence from the device was observed in the near-infrared region","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Near-infrared Electroluminescence from Multilayered CdF2/CaF2 Quantum Heterostructure Grown on Trench-Patterned Si\",\"authors\":\"Keisuke Jinen, Kaoru Uchida, S. Kodaira, M. Watanabe, M. Asada\",\"doi\":\"10.1109/GROUP4.2006.1708188\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CdF<sub>2</sub>/CaF<sub>2</sub> intersubband transition light-emitting structure is fabricated on a trench-patterned Si substrate. Electroluminescence from the device was observed in the near-infrared region\",\"PeriodicalId\":342599,\"journal\":{\"name\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2006.1708188\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd IEEE International Conference on Group IV Photonics, 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2006.1708188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Near-infrared Electroluminescence from Multilayered CdF2/CaF2 Quantum Heterostructure Grown on Trench-Patterned Si
A CdF2/CaF2 intersubband transition light-emitting structure is fabricated on a trench-patterned Si substrate. Electroluminescence from the device was observed in the near-infrared region
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