Dielectric Matrix Influence on the Photoluminescence Properties of Silicon Nanocrystals

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708221

L. Ferraioli, M. Cazzanelli, N. Daldosso, V. Mulloni, P. Belluti, S. Yerci, R. Turan, A. Mikhaylov, D. Tetelbaum, Lorenzo Pavesi

引用次数: 1

Abstract

Photoluminescence properties of silicon nanocrystals embedded in five different oxide matrices are analyzed. Samples are silicon rich oxide and oxynitride produced by PECVD and ion implantation and crystalline and amorphous aluminum oxide implanted with silicon

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介电基质对硅纳米晶体光致发光性能的影响

分析了硅纳米晶体在五种不同氧化物基体中的光致发光特性。样品有PECVD和离子注入制备的富硅氧化物和氮化氧，以及硅注入的结晶型和非晶型氧化铝

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

3rd IEEE International Conference on Group IV Photonics, 2006.

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