锗-on- soi光电探测器和接收器的温度依赖性分析

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708205

S. Koester, L. Schares, C. Schow, G. Dehlinger, R. John

{"title":"锗-on- soi光电探测器和接收器的温度依赖性分析","authors":"S. Koester, L. Schares, C. Schow, G. Dehlinger, R. John","doi":"10.1109/GROUP4.2006.1708205","DOIUrl":null,"url":null,"abstract":"The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85degC despite a 10x increase in dark current compared to room temperature","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"Temperature-Dependent Analysis of Ge-on-SOI Photodetectors and Receivers\",\"authors\":\"S. Koester, L. Schares, C. Schow, G. Dehlinger, R. John\",\"doi\":\"10.1109/GROUP4.2006.1708205\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85degC despite a 10x increase in dark current compared to room temperature\",\"PeriodicalId\":342599,\"journal\":{\"name\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2006.1708205\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd IEEE International Conference on Group IV Photonics, 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2006.1708205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 36

摘要

研究了锗硅soi光电二极管暗电流和接收器性能的温度依赖性。尽管与室温相比，暗电流增加了10倍，但在85°c下实现了10 Gb/s的无差错接收器操作

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Temperature-Dependent Analysis of Ge-on-SOI Photodetectors and Receivers

The temperature dependence of dark current and receiver performance for Ge-on-SOI photodiodes is presented. Error-free receiver operation at 10 Gb/s is achieved at 85degC despite a 10x increase in dark current compared to room temperature

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3rd IEEE International Conference on Group IV Photonics, 2006.

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