T. MacElwee, S. Hill, S. Campbell, D. Ducharme, B.A. Ruoux, I. Calder, M. Flynn, J. Wójcik, S. Gujrathi, P. Mascher
{"title":"稀土掺杂富硅SiOx的亮绿色可见电致发光","authors":"T. MacElwee, S. Hill, S. Campbell, D. Ducharme, B.A. Ruoux, I. Calder, M. Flynn, J. Wójcik, S. Gujrathi, P. Mascher","doi":"10.1109/GROUP4.2006.1708218","DOIUrl":null,"url":null,"abstract":"Silicon rich silicon oxide was deposited by ECR-PECVD, doped with Er or Tb, and processed into device structures. Electrical measurements were used to characterize conduction mechanisms while spectroscopic electroluminescence provided information on brightness and mechanisms","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Bright Green Visible Electroluminescence from Rare Earth Doped Silicon Rich SiOx\",\"authors\":\"T. MacElwee, S. Hill, S. Campbell, D. Ducharme, B.A. Ruoux, I. Calder, M. Flynn, J. Wójcik, S. Gujrathi, P. Mascher\",\"doi\":\"10.1109/GROUP4.2006.1708218\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon rich silicon oxide was deposited by ECR-PECVD, doped with Er or Tb, and processed into device structures. Electrical measurements were used to characterize conduction mechanisms while spectroscopic electroluminescence provided information on brightness and mechanisms\",\"PeriodicalId\":342599,\"journal\":{\"name\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2006.1708218\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd IEEE International Conference on Group IV Photonics, 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2006.1708218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bright Green Visible Electroluminescence from Rare Earth Doped Silicon Rich SiOx
Silicon rich silicon oxide was deposited by ECR-PECVD, doped with Er or Tb, and processed into device structures. Electrical measurements were used to characterize conduction mechanisms while spectroscopic electroluminescence provided information on brightness and mechanisms