Near-infrared Electroluminescence from Multilayered CdF2/CaF2 Quantum Heterostructure Grown on Trench-Patterned Si

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708188

Keisuke Jinen, Kaoru Uchida, S. Kodaira, M. Watanabe, M. Asada

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Abstract

A CdF₂/CaF₂ intersubband transition light-emitting structure is fabricated on a trench-patterned Si substrate. Electroluminescence from the device was observed in the near-infrared region

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沟槽图案硅上生长多层CdF2/CaF2量子异质结构的近红外电致发光

在沟槽图案硅衬底上制备了CdF2/CaF2子带间跃迁发光结构。在近红外区观察到器件的电致发光

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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3rd IEEE International Conference on Group IV Photonics, 2006.

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