拉伸应变锗硅薄膜中的大电光效应

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1063/1.2363948

S. Jongthammanurak, J. Liu, K. Wada, D. Cannon, D. T. Danielson, D. Pan, J. Michel, L. Kimerling

{"title":"拉伸应变锗硅薄膜中的大电光效应","authors":"S. Jongthammanurak, J. Liu, K. Wada, D. Cannon, D. T. Danielson, D. Pan, J. Michel, L. Kimerling","doi":"10.1063/1.2363948","DOIUrl":null,"url":null,"abstract":"We report the observation of an enhanced electro-optic effect in the weakly absorbing regime for tensile strained Ge epitaxial films. With Deltan/F=260 pm/V and Deltaalpha/alpha-3 the material has significant potential for field-induced phase or electro-absorption modulator devices","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"120 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"73","resultStr":"{\"title\":\"Large Electro-Optic Effect in Tensile Strained Ge-on-Si Films\",\"authors\":\"S. Jongthammanurak, J. Liu, K. Wada, D. Cannon, D. T. Danielson, D. Pan, J. Michel, L. Kimerling\",\"doi\":\"10.1063/1.2363948\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the observation of an enhanced electro-optic effect in the weakly absorbing regime for tensile strained Ge epitaxial films. With Deltan/F=260 pm/V and Deltaalpha/alpha-3 the material has significant potential for field-induced phase or electro-absorption modulator devices\",\"PeriodicalId\":342599,\"journal\":{\"name\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"volume\":\"120 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"73\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.2363948\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd IEEE International Conference on Group IV Photonics, 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.2363948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 73

摘要

我们报道了在拉伸应变的锗外延薄膜弱吸收区观察到的增强的电光效应。当δ δ /F=260 pm/V和δ α / α -3时，该材料具有用于场感应相位或电吸收调制器器件的显著潜力

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Large Electro-Optic Effect in Tensile Strained Ge-on-Si Films

We report the observation of an enhanced electro-optic effect in the weakly absorbing regime for tensile strained Ge epitaxial films. With Deltan/F=260 pm/V and Deltaalpha/alpha-3 the material has significant potential for field-induced phase or electro-absorption modulator devices

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3rd IEEE International Conference on Group IV Photonics, 2006.

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