Introducing Carrier Localisation in Total Internal Reflection Optical Switches to Restrict Carrier Diffusion in the Guiding Layer

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708171

D. Thomson, G. Reed, F. Gardes, G. Mashanovich, S. Howe

引用次数: 2

Abstract

Previous total internal reflection based switches have suffered from the diffusion of carriers in the guiding layer leading to inefficient reflection and carrier injection. In our proposed device this problem is overcome by using a SiO2 barrier

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在全内反射光开关中引入载波定位以限制导频层中的载波扩散

以往基于全内反射的开关存在导层载流子扩散导致反射和载流子注入效率低下的问题。在我们提出的装置中，通过使用SiO2屏障来克服这个问题

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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3rd IEEE International Conference on Group IV Photonics, 2006.

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