时间分辨和时间积分光致发光技术研究纳米晶Si/SiO2多层膜中载流子复合的温度依赖性过程

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708177

S. Choi, Sung Kim, Y. Park, K. Kim

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引用次数: 0

摘要

在这项研究中，离子束溅射沉积(IBSD)被用于制造50周期SiO2/SiOx多层膜，随后在SiOx层中退火形成Si纳米晶体(nc)。我们报告了在每个x值(NC尺寸)下，温度相关的综合PL强度与PL寿命的有趣相关性，并讨论了解释实验结果的可能机制

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Temperature-Dependent Carrier Recombination Processes in Nanocrystalline Si/SiO2 Multi-Layers Studied by Time-Resolved and Time-Integrated Photoluminescence

In this study, ion beam sputtering deposition (IBSD) has been used to fabricate 50-period SiO2/SiOx multilayers, which have been subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. We report interesting correlation of temperature-dependent integrated PL intensity with the PL lifetime at each x value (NC size) and discuss possible mechanisms to explain the experimental results

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3rd IEEE International Conference on Group IV Photonics, 2006.

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