Monolithic, Bufferless AlGaSb Emitters on Si based on Interfacial Misfit Arrays

Abstract

In this paper a monolithic, bufferless approach to III-V devices on Si substrates based on a self-assembled array of 90deg interfacial misfits (IMF) is discussed. This growth method, based on III-Sb, is fundamentally different from previously reported approaches since the strain energy due to the 13% lattice mismatch is fully and immediately relieved at the III-V interface rather than tetragonal distortion followed by defect formation as in III-As on Si