发布求助
文献互助 智能选刊 最新文献

2015 45th European Solid State Device Research Conference (ESSDERC)最新文献

筛选
英文 中文
Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization 通过16kb存储器切割表征Al2O3/HfO2双分子层对BEOL RRAM集成的好处
2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324765
M. Azzaz, A. Benoist, E. Vianello, D. Garbin, E. Jalaguier, C. Cagli, C. Charpin, S. Bernasconi, S. Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, P. Candelier, C. Fenouillet-Béranger, L. Perniola
{"title":"Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization","authors":"M. Azzaz, A. Benoist, E. Vianello, D. Garbin, E. Jalaguier, C. Cagli, C. Charpin, S. Bernasconi, S. Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, P. Candelier, C. Fenouillet-Béranger, L. Perniola","doi":"10.1109/ESSDERC.2015.7324765","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324765","url":null,"abstract":"In this paper, for the first time, the reliability of HfO<sub>2</sub>-based RRAM devices integrated in an advanced 28nm CMOS 16kbit demonstrator is presented. The effect of the introduction of a thin Al<sub>2</sub>O<sub>3</sub> layer in TiN/Ti/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/TiN is explored to improve the memory performances. Thanks to the in-depth electrical characterization of both HfO<sub>2</sub> and HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> stacks at device level and in the 16×1kbit demonstrator the interest of the bilayer is put forward (endurance: 1 decade after 1M cycles and retention: 6 hours at 200°C). Finally, thanks to our 3D model based on calculation of the Conductive Filament resistance using trap assisted tunneling (TAT) the role of Al<sub>2</sub>O<sub>3</sub> as tunneling layer is highlighted.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122312086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Compact heterodyne NEMS oscillator for sensing applications 用于传感应用的紧凑型外差NEMS振荡器
2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324734
M. Sansa, Guillaume Gourlat, G. Jourdan, P. Villard, G. Sicard, S. Hentz
{"title":"Compact heterodyne NEMS oscillator for sensing applications","authors":"M. Sansa, Guillaume Gourlat, G. Jourdan, P. Villard, G. Sicard, S. Hentz","doi":"10.1109/ESSDERC.2015.7324734","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324734","url":null,"abstract":"We present a novel topology of heterodyne nanoelectromechanical (NEMS) self-oscillator, aimed at the dense integration of resonator arrays for sensing applications. This oscillator is based on an original measurement method, suitable for both open loop and closed loop operations, which simplifies current down-mixing set-ups. When implemented on-chip, it will allow the reduction of the size and power consumption of readout CMOS circuitry. This is today the limiting factor for the integration density of NEMS oscillators for real-life applications. Here we characterize this method in open-loop and closed-loop, and evaluate its frequency stability.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"279 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132132656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High performance NEMS devices for sensing applications 用于传感应用的高性能NEMS器件
2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324706
T. Ernst, S. Hentz, J. Arcamone, V. Agache, L. Duraffourg, I. Ouerghi, W. Ludurczak, C. Ladner, E. Ollier, P. Andreucci, É. Colinet, P. Puget
{"title":"High performance NEMS devices for sensing applications","authors":"T. Ernst, S. Hentz, J. Arcamone, V. Agache, L. Duraffourg, I. Ouerghi, W. Ludurczak, C. Ladner, E. Ollier, P. Andreucci, É. Colinet, P. Puget","doi":"10.1109/ESSDERC.2015.7324706","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324706","url":null,"abstract":"NEMS based sensors open several opportunities for integrated solutions in emerging domains as chemical analysis and life science. With critical dimensions ranging between 10 and 100 nm, those devices can be made at the VLSI scale, possibly co-integrated with CMOS and are well suited for autonomous, highly sensitive or dense sensors. Several applications will be presented, as complex gas portable recognitions systems, mass spectrometry, or bio-sensors.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122260555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices 牺牲镧扩散在hfon基14nm NFET器件上的有效功函数工程
2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324760
C. Suarez-Segovia, C. Leroux, F. Domengie, K. Dabertrand, V. Joseph, G. Romano, P. Caubet, S. Zoll, O. Weber, G. Ghibaudo, G. Reimbold, M. Haond
{"title":"Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices","authors":"C. Suarez-Segovia, C. Leroux, F. Domengie, K. Dabertrand, V. Joseph, G. Romano, P. Caubet, S. Zoll, O. Weber, G. Ghibaudo, G. Reimbold, M. Haond","doi":"10.1109/ESSDERC.2015.7324760","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324760","url":null,"abstract":"In this paper, the impact of metallic lanthanum (La) deposited by Radio-Frequency PVD on effective work function (WFeff) of HfON-based NFET devices in a sacrificial metal gate-first approach is evaluated for the first time. Engineering of WFeff towards N+ without leakage degradation is demonstrated by tuning both the pedestal TiN thickness and the as-deposited metallic La dose. WFeff shift is related to a La-induced interfacial dipole (5), whose value has been correlated to the effective La dose into HfON/SiON stack after diffusion annealing, which has been accurately measured through a spectroscopic method based on La X-Ray Fluorescence (XRF).","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116007939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Computational electronics for the 21st century: Reflections on the past, present, and future 21世纪的计算电子学:对过去、现在和未来的反思
2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324707
Mark S. Lundstrom
{"title":"Computational electronics for the 21st century: Reflections on the past, present, and future","authors":"Mark S. Lundstrom","doi":"10.1109/ESSDERC.2015.7324707","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324707","url":null,"abstract":"The author's career has coincided with the development of numerical simulation into an essential component of semiconductor device technology research and development. We now have a sophisticated suite of simulation capabilities along with new challenges for 21st Century electronics. This talk presents a short history of the field and a description of the current state of the art, but it concentrates on lessons learned and thoughts about how computational electronics can continue to contribute effectively to the development of new electronic device technologies. The author will argue that electronics is changing, and that computational electronics can play a key role in this evolution. In addition to supporting the continuing development of a small suite of physically detailed / first principles tools, he will argue for more emphasis on analytically compact, strongly physical, conceptual models. Such models help guide the development of physically detailed models, connect to circuit and application designers, and advance device science itself.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124063252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Systematic comparison of metal contacts on CVD graphene CVD石墨烯上金属触点的系统比较
2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324744
A. Gahoi, V. Passi, S. Kataria, S. Wagner, A. Bablich, M. Lemme
{"title":"Systematic comparison of metal contacts on CVD graphene","authors":"A. Gahoi, V. Passi, S. Kataria, S. Wagner, A. Bablich, M. Lemme","doi":"10.1109/ESSDERC.2015.7324744","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324744","url":null,"abstract":"An experimental study was conducted for forming high quality ohmic contacts to graphene. Metal contacts of platinum/gold (Pt/Au), nickel/gold (Ni/Au), palladium (Pd), Ni, and Au to monolayer chemical vapor deposited graphene were studied. The experimental data reveal that pure Au and Ni/Au provide highly reproducible low resistance ohmic contacts. The results presented in this work indicate potential contact metals suitable for high frequency electronic devices.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"15 7-8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120892439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM Cu/ al2o3基电桥RAM低电流(10μA)写入算法优化
2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324726
A. Belmonte, A. Fantini, A. Redolfi, M. Houssa, M. Jurczak, L. Goux
{"title":"Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM","authors":"A. Belmonte, A. Fantini, A. Redolfi, M. Houssa, M. Jurczak, L. Goux","doi":"10.1109/ESSDERC.2015.7324726","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324726","url":null,"abstract":"In this paper we engineer the programming method at 10μA in Cu/Al2O3-based CBRAM to reduce the bit dispersion and the state instability over time. Despite its large median value, the overall HRS/LRS ratio in these devices can be drastically reduced due to the LRS and HRS dispersion, especially in a low-current regime. For this reason, in this study we adopt a statistical approach, focusing on the tails of the cumulative distribution Function (CDF). Using different verify-based algorithms we force an initial tail-to-tail (1st percentile of CDF) resistive window, demonstrating that, in order to reduce the total programming time, a complete Write/Erase cycle must be performed at each verify step. We also prove that the stability of the programmed LRS/HRS states is affected by the programming pulse width (PW) used in the algorithm. Selecting the appropriate PW, no overlap of the LRS and HRS distributions is observed after 1 week at room temperature.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"16 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120989016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow 基于可靠性感知仿真流程的6T-SRAM单元老化统计仿真
2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324758
R. Hussin, L. Gerrer, J. Ding, Liping Wang, S. Amoroso, B. Cheng, D. Reid, P. Weckx, Marko Simicic, J. Franco, A. Vanderheyden, D. Vanhaeren, N. Horiguchi, B. Kaczer, A. Asenov
{"title":"Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow","authors":"R. Hussin, L. Gerrer, J. Ding, Liping Wang, S. Amoroso, B. Cheng, D. Reid, P. Weckx, Marko Simicic, J. Franco, A. Vanderheyden, D. Vanhaeren, N. Horiguchi, B. Kaczer, A. Asenov","doi":"10.1109/ESSDERC.2015.7324758","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324758","url":null,"abstract":"This work present the last development of a statistical reliability aware simulation flow from transistors to circuits. A TCAD calibration methodology based on statistical measurement of a 60nm bulk MOSFET is presented. Statistical compact models of fresh and aged transistors are extracted form large ensembles of TCAD simulations results. Compact models representing intermediate stages of degradation, not captured in the TCAD simulations, are interpolated using a proprietary compact model generator. Statistical simulations results for a 6T-SRAM cell aging are presented following various aging scenario for both static noise margin and intrinsic write time.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132564969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sharp-switching Z2-FET device in 14 nm FDSOI technology 14纳米FDSOI技术的锐利开关Z2-FET器件
2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324761
H. E. Dirani, Y. Solaro, P. Fonteneau, P. Ferrari, S. Cristoloveanu
{"title":"Sharp-switching Z2-FET device in 14 nm FDSOI technology","authors":"H. E. Dirani, Y. Solaro, P. Fonteneau, P. Ferrari, S. Cristoloveanu","doi":"10.1109/ESSDERC.2015.7324761","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324761","url":null,"abstract":"Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, an adjustable triggering voltage (VON), and can be considered for Electro-Static Discharge (ESD). The operation of our device relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained on the 14 nm FDSOI (Fully Depleted SOI) node.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131927009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Improved surface roughness modeling and mobility projections in thin film MOSFETs 改进薄膜mosfet的表面粗糙度建模和迁移率预测
2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324775
O. Badami, E. Caruso, D. Lizzit, D. Esseni, P. Palestri, L. Selmi
{"title":"Improved surface roughness modeling and mobility projections in thin film MOSFETs","authors":"O. Badami, E. Caruso, D. Lizzit, D. Esseni, P. Palestri, L. Selmi","doi":"10.1109/ESSDERC.2015.7324775","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324775","url":null,"abstract":"We report mobility simulations for long channel Si and InGaAs MOSFETs as a function of the semiconductor film thickness and inversion charge. Calculations account for numerous relevant scattering mechanisms and surface roughness is described by the recently developed non-linear model [1]. Reasonable agreement with available experiments is obtained employing the measured surface roughness r.m.s. value. The results reveal that the film thickness dependence of mobility in III-V MOSFETs is weaker than predicted by the Tw6 law typically observed in silicon devices.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121210332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信