14纳米FDSOI技术的锐利开关Z2-FET器件

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI:10.1109/ESSDERC.2015.7324761

H. E. Dirani, Y. Solaro, P. Fonteneau, P. Ferrari, S. Cristoloveanu

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引用次数: 18

摘要

Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET)是一种最新的锐利开关器件，在漏电流和触发控制方面取得了显著的性能。该器件采用超薄体和埋藏氧化物(UTBB)绝缘体上硅(SOI)技术制造，具有非常尖锐的开关，可调触发电压(VON)，可考虑用于静电放电(ESD)。该装置的运行依赖于电子和空穴注入势垒的调制。在本文中，我们首次展示了在14 nm FDSOI (Fully depletion SOI)节点上获得的实验数据。

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Sharp-switching Z2-FET device in 14 nm FDSOI technology

Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, an adjustable triggering voltage (VON), and can be considered for Electro-Static Discharge (ESD). The operation of our device relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained on the 14 nm FDSOI (Fully Depleted SOI) node.

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2015 45th European Solid State Device Research Conference (ESSDERC)

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