M. Azzaz, A. Benoist, E. Vianello, D. Garbin, E. Jalaguier, C. Cagli, C. Charpin, S. Bernasconi, S. Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, P. Candelier, C. Fenouillet-Béranger, L. Perniola
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Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization
In this paper, for the first time, the reliability of HfO2-based RRAM devices integrated in an advanced 28nm CMOS 16kbit demonstrator is presented. The effect of the introduction of a thin Al2O3 layer in TiN/Ti/HfO2/Al2O3/TiN is explored to improve the memory performances. Thanks to the in-depth electrical characterization of both HfO2 and HfO2/Al2O3 stacks at device level and in the 16×1kbit demonstrator the interest of the bilayer is put forward (endurance: 1 decade after 1M cycles and retention: 6 hours at 200°C). Finally, thanks to our 3D model based on calculation of the Conductive Filament resistance using trap assisted tunneling (TAT) the role of Al2O3 as tunneling layer is highlighted.
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