2015 45th European Solid State Device Research Conference (ESSDERC)最新文献_第6页

Unified system level model of adsorption/desorption process and sensing electronics for vapor trace detection of different molecules in the air 吸附/解吸过程的统一系统级模型和用于空气中不同分子蒸气痕量检测的传感电子器件

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324747

D. Strle, J. Trontelj

引用次数: 0

Scalability of planar FDSOI and FinFETs and What's in store for the future beyond that? 平面FDSOI和finfet的可扩展性以及未来的发展趋势?

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324738

B. Doris, T. Hook

引用次数: 2

Predictive physical simulation of III/V quantum-well MISFETs for logic applications 用于逻辑应用的III/V量子阱misfet的预测物理模拟

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324776

Z. Stanojević, M. Karner, Martin Aichhorn, Ferdinand Mitterbauer, V. Eyert, C. Kernstock, H. Kosina

引用次数: 4

H2 annealing for metallic contaminant reduction in BCD-SOI process: Benefits and drawbacks BCD-SOI工艺中金属污染物还原的H2退火:优点和缺点

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324772

G. Ghidini, D. Merlini, Massimiliano Cannavo, M. Polignano, I. Mica, A. Galbiati, L. Zullino, Riccardo Turconi, S. Grasso, Maurizio Moroni, D. Codegoni

引用次数: 0

On the voltage scaling potential of SONOS non-volatile memory transistors SONOS非易失性存储晶体管的电压缩放电位研究

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324727

J. Ocker, S. Slesazeck, T. Mikolajick, S. Buschbeck, S. Günther, E. Yurchuk, R. Hoffmann, V. Beyer

引用次数: 4

Novel CMOS-compatible a-Si based oscillator and threshold switch 新型cmos兼容a-Si振荡器和阈值开关

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324721

Abhishek A. Sharma, M. Skowronski, J. Bain, J. Weldon

{"title":"Novel CMOS-compatible a-Si based oscillator and threshold switch","authors":"Abhishek A. Sharma, M. Skowronski, J. Bain, J. Weldon","doi":"10.1109/ESSDERC.2015.7324721","DOIUrl":"https://doi.org/10.1109/ESSDERC.2015.7324721","url":null,"abstract":"Resistive switching devices and neuromorphic computing systems, while an attractive solution to minimize compute bottlenecks, suffer from sneak-path problem and area inefficient implementations respectively. This has prompted research in developing beyond-CMOS functional blocks that can serve as a compact single device circuit block (selector and oscillator respectively). In this work, we explore amorphous-Si based metal-semiconductor-metal (MSM) devices to serve this function. CMOS compatible Pt/a-Si/Cu stacks show negative differential resistance (NDR) that enables their operation as oscillatory elements and as non-linear threshold switches. As a first demonstration of oscillations in a-Si, we report frequency tunability from 5 kHz to 80 MHz by modulating the series ballast and by changing the source voltage. The devices show low-voltage (<; 1.2 V), low-power operation (<; 100 μW). As threshold switches, these devices show a resistance change of > 800 between ON and OFF states with a peak current density of > 0.3 MA/cm2 at 1 V. Through an analysis of the change in the snap-back time (persistence) and the peak ON-state current, we evaluate the change in the modes of operation of the device as a threshold switch and as an oscillator.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122710338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects 电压驱动双极rram的导通特性建模，包括拐点效应

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324709

J. Blasco, J. Suñé, E. Miranda

引用次数: 1

Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors 单层双门控石墨烯场效应晶体管中热载流子和偏置应力分量的相互作用

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324741

Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Östling, M. Lemme, T. Grasser

引用次数: 1

A surface potential and current model for polarity-controllable silicon nanowire FETs 极性可控硅纳米线场效应管的表面电位和电流模型

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI: 10.1109/ESSDERC.2015.7324710

Jian Zhang, P. Gaillardon, G. Micheli

引用次数: 6

Nature as microelectronic fab: Bioelectronics: Materials, transistors and circuits 自然作为微电子工厂;生物电子学:材料、晶体管和电路

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-02 DOI: 10.1109/ESSCIRC.2015.7313816

B. Stadlober, E. Karner, Andreas Petritz, A. Fian, M. Irimia‐Vladu

{"title":"Nature as microelectronic fab: Bioelectronics: Materials, transistors and circuits","authors":"B. Stadlober, E. Karner, Andreas Petritz, A. Fian, M. Irimia‐Vladu","doi":"10.1109/ESSCIRC.2015.7313816","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2015.7313816","url":null,"abstract":"Over the last five years, a series of novel organic materials that either occur freely or are extracted from nature have been applied in transistors and simple electronic circuits (inverters) as biocompatible and biodegradable dielectrics and semiconductors. Although these materials have natural origin, are abundant on earth and in many respects were exploited by humanity since centuries or even millennia, they often do not deliver the expected outcome for high performance electronics. This situation motivated chemists to synthesize organic materials inspired by the natural ones (i.e. nature-inspired), with improved structures for high-performance organic electronics development. Here, we elaborate on the usage of the new class of naturally-occurring and nature-inspired organic materials employed in electronic circuits. Such novel structures impart high performance and high stability to integrated circuits, and hold the appealing features of biocompatibility and biodegradability. They carry a huge potential for achieving the sustainability goal in electronics industry, corroborated by resource efficiency and electronic waste reduction.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124893952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6