Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects

Abstract

A recursive model for the quasi-static current-voltage (I-V) characteristic of voltage-driven bipolar resistive RAM (RRAM) devices is reported. The model is based on the Krasnosel'skiĩ-Pokrovskiĩ hysteresis operator and accounts for the sequential creation and destruction of conductive channels spanning the dielectric film. It is shown in this work how the basic model formulation can be upgraded so as to include partial degradation and recovery effects occurring close to the SET and RESET transition edges.