{"title":"极性可控硅纳米线场效应管的表面电位和电流模型","authors":"Jian Zhang, P. Gaillardon, G. Micheli","doi":"10.1109/ESSDERC.2015.7324710","DOIUrl":null,"url":null,"abstract":"Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated and has shown large potential in circuit applications. To fully explore its circuit-level opportunities, a physics-based compact model of the polarity-controllable SiNWFET is required. Therefore, in this paper, we extend the solution for conventional SiNWFETs to polarity-controllable SiNWFETs. By solving the current continuity equation, the potential distribution and drain current is obtained. The model shows good aoreement with TCAD simulation. It can be used as the core to develop the complete compact model for polarity-controllable SiNWFETs.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A surface potential and current model for polarity-controllable silicon nanowire FETs\",\"authors\":\"Jian Zhang, P. Gaillardon, G. Micheli\",\"doi\":\"10.1109/ESSDERC.2015.7324710\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated and has shown large potential in circuit applications. To fully explore its circuit-level opportunities, a physics-based compact model of the polarity-controllable SiNWFET is required. Therefore, in this paper, we extend the solution for conventional SiNWFETs to polarity-controllable SiNWFETs. By solving the current continuity equation, the potential distribution and drain current is obtained. The model shows good aoreement with TCAD simulation. It can be used as the core to develop the complete compact model for polarity-controllable SiNWFETs.\",\"PeriodicalId\":332857,\"journal\":{\"name\":\"2015 45th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 45th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2015.7324710\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 45th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2015.7324710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A surface potential and current model for polarity-controllable silicon nanowire FETs
Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated and has shown large potential in circuit applications. To fully explore its circuit-level opportunities, a physics-based compact model of the polarity-controllable SiNWFET is required. Therefore, in this paper, we extend the solution for conventional SiNWFETs to polarity-controllable SiNWFETs. By solving the current continuity equation, the potential distribution and drain current is obtained. The model shows good aoreement with TCAD simulation. It can be used as the core to develop the complete compact model for polarity-controllable SiNWFETs.
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