牺牲镧扩散在hfon基14nm NFET器件上的有效功函数工程

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI:10.1109/ESSDERC.2015.7324760

C. Suarez-Segovia, C. Leroux, F. Domengie, K. Dabertrand, V. Joseph, G. Romano, P. Caubet, S. Zoll, O. Weber, G. Ghibaudo, G. Reimbold, M. Haond

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引用次数: 10

摘要

本文首次评估了牺牲金属栅优先方法下，射频PVD沉积金属镧(La)对hfon基NFET器件有效功函数(WFeff)的影响。通过调整基座TiN厚度和沉积金属La剂量，证明了WFeff向N+方向的工程无泄漏降解。WFeff位移与La诱导的界面偶极子(5)有关，其值与扩散退火后进入HfON/SiON堆叠的有效La剂量有关，该剂量已通过基于La x射线荧光(XRF)的光谱方法精确测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices

In this paper, the impact of metallic lanthanum (La) deposited by Radio-Frequency PVD on effective work function (WFeff) of HfON-based NFET devices in a sacrificial metal gate-first approach is evaluated for the first time. Engineering of WFeff towards N+ without leakage degradation is demonstrated by tuning both the pedestal TiN thickness and the as-deposited metallic La dose. WFeff shift is related to a La-induced interfacial dipole (5), whose value has been correlated to the effective La dose into HfON/SiON stack after diffusion annealing, which has been accurately measured through a spectroscopic method based on La X-Ray Fluorescence (XRF).

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2015 45th European Solid State Device Research Conference (ESSDERC)

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