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2010 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method 提出了一种利用非线性幂函数法统计生成非正态分布PSP压缩模型参数的新方法
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604552
U. Kovac, D. Dideban, B. Cheng, N. Moezi, G. Roy, A. Asenov
{"title":"A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method","authors":"U. Kovac, D. Dideban, B. Cheng, N. Moezi, G. Roy, A. Asenov","doi":"10.1109/SISPAD.2010.5604552","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604552","url":null,"abstract":"Statistical variability (SV) is one of the fundamental limiting factors for future nano- CMOS scaling and integration of. Variability aware design is essential to achieve reasonable yield and reliability in the manufacture of circuit and systems. To develop effective variability aware design technologies it is essential to have a reliable and accurate statistical compact modeling strategy. In this study a nonlinear power method (NPM) based statistical compact modeling strategy is presented. The results indicate that statistical compact model parameters generated by a NPM approach are significantly better at capturing the tails and non-normal shape of statistical parameter distributions when compared with principal component analysis (PCA).","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121753365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Optimal design of III–V heterostructure MOSFETs III-V异质结构mosfet的优化设计
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604557
A. Nainani, Ze Yuan, T. Krishnamohan, K. Saraswat
{"title":"Optimal design of III–V heterostructure MOSFETs","authors":"A. Nainani, Ze Yuan, T. Krishnamohan, K. Saraswat","doi":"10.1109/SISPAD.2010.5604557","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604557","url":null,"abstract":"Sb based materials offer large VBO/CBO suitable for heterostructure design. The small CBO for InGaAs/InP NMOS can be overcome by intelligent use of modulation doping. A heterostructure design with TCAP=1nm can reduce the effect of Dit (Fig. 11), lead to an order of magnitude reduction in BTBT (Fig. 13) and a 100/50% improvement in the IDsat (Fig. 14) while maintaining good electrostatic control in terms of subthreshold swing and DIBL (Fig. 11).","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"52 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130535762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A non-linear variational principle for the self-consistent solution of Poisson's equation and a transport equation in the local density approximation 局部密度近似下泊松方程和输运方程自洽解的非线性变分原理
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604537
H. Carrillo-Nuñez, W. Magnus, F. Peeters
{"title":"A non-linear variational principle for the self-consistent solution of Poisson's equation and a transport equation in the local density approximation","authors":"H. Carrillo-Nuñez, W. Magnus, F. Peeters","doi":"10.1109/SISPAD.2010.5604537","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604537","url":null,"abstract":"In order to simplify the numerical investigation of carrier transport in nanodevices without jeopardizing the rigor of a full quantum mechanical treatment, we have exploited an existing variational principle to solve self-consistently Poisson's equation and Schrödinger's equation as well as an appropriate transport equation within the scope of the generalized local density approximation (GLDA). In this work, as a benchmark, we have applied our approach to compute the ballistic current density and electron concentration in a Si nanowire.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134338074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices 高κ/金属栅器件中金属栅功函数波动的统计模拟
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604544
Chia-Hui Yu, Ming-Hung Han, Hui-Wen Cheng, Zhong-Cheng Su, Yiming Li, Hiroshi Watanabe
{"title":"Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices","authors":"Chia-Hui Yu, Ming-Hung Han, Hui-Wen Cheng, Zhong-Cheng Su, Yiming Li, Hiroshi Watanabe","doi":"10.1109/SISPAD.2010.5604544","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604544","url":null,"abstract":"In this work, we statistically examine the emerging high-κ/ metal gate work-function fluctuation (WKF) induced threshold voltage (Vth) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can significantly reduce the impact of Vth fluctuation owing to WKF. First, four kinds of gate material are examined and TiN possesses the smallest Vth fluctuation. For fabrication process, a fast deposition of metal at lower temperature prevents the metal grain not to grow to large size result in a smaller variation. In addition, an idea of modeling multilayer metal gate WKF is also presented and discussed, in which the first layer plays the most important role, compared with other layers, for the fluctuation suppression.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131995854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs 硅双栅nmosfet的确定性多子带玻尔兹曼求解器的稳定实现
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604500
K. Zhao, Sung-Min Hong, C. Jungemann, Ru-Qi Han
{"title":"Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs","authors":"K. Zhao, Sung-Min Hong, C. Jungemann, Ru-Qi Han","doi":"10.1109/SISPAD.2010.5604500","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604500","url":null,"abstract":"Silicon Double Gate nMOSFETs are simulated using a deterministic Boltzmann solver coupled with a 1D Schrödinger and 2D Poisson Equation. Subthreshold characteristics and high drain bias conditions can be well simulated by the solver stabilized by the H-transformation and the maximum entropy dissipation scheme.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133040874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs) 纳米级薄盒硅基mosfet (SOTB mosfet)的可变性
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604533
Yunxiang Yang, G. Du, R. Han, Xiaoyan Liu
{"title":"Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)","authors":"Yunxiang Yang, G. Du, R. Han, Xiaoyan Liu","doi":"10.1109/SISPAD.2010.5604533","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604533","url":null,"abstract":"Lightly doped or even intrinsic channel can be used in SOTB MOSFETs and therefore very Low RDF (random dopant flunctuation) can be expected in such devices. In this work, we systematically investigated the influences of the intrinsic parameter fluctuations, including LER (line-edge-roughness), STV (silicon thickness variation) and WFV (metal-gate work-function variation), on 20nm-gate intrinsic SOTB MOSFETs with GP (ground plane). Conditions of SOTB without GP and with PGP (partial ground plane) are also simulated for comparison. Our results show that LER dominates fluctuations in n-SOTB while LER and WFV dominate that in p-SOTB. Introduction of GP can effectively reduce LER- and STV-induced variations of Vtsat, DIBL and Ion with a slightly sacrifice of σLog(Ioff) while it has little effect on WFV-induced variations. A detailed design of PGP is desired from the perspective of variability-aware optimization.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132232469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
First-principle calculation for luminescent-effects of Si and Zn impurities in GaN 氮化镓中Si和Zn杂质发光效应的第一性原理计算
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604578
X. Ji, M. Gao, Yan Wang
{"title":"First-principle calculation for luminescent-effects of Si and Zn impurities in GaN","authors":"X. Ji, M. Gao, Yan Wang","doi":"10.1109/SISPAD.2010.5604578","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604578","url":null,"abstract":"Phosphor-free GaN-based white-light LED which is usually generated as a combination of the blue bandedge emission and a yellow-green broad-band emission has been approved to be more reliable than phosphor-based white-light LED. First-principle method was employed to investigate the luminescent-effects of Si and Zn impurities in phosphor-free GaN-based LED. By explicitly calculating the formation energies and defect levels, the origin of yellow-green broad-band emission in Si and Zn co-dopoed InGaN/GaN multiquantum wells(MQWs) were discussed and determined. We propose that the electron transition between Zni/ZnN-SiN D-A pairs are responsible for the observed yellow-green broad-band emission.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"28 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129373282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling of thin-film Cu(In,Ga)Se2 solar cells 薄膜Cu(In,Ga)Se2太阳能电池的建模
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604580
F. Troni, F. Dodi, G. Sozzi, R. Menozzi
{"title":"Modeling of thin-film Cu(In,Ga)Se2 solar cells","authors":"F. Troni, F. Dodi, G. Sozzi, R. Menozzi","doi":"10.1109/SISPAD.2010.5604580","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604580","url":null,"abstract":"We show results of numerical and compact modeling of poly-crystalline CIGS thin-film solar cells. We use numerical simulations as a benchmark to develop a simple, physics-based compact model of the behavior of the cell in the dark. We show that, while the single-crystal cell behavior can be accurately described by a two-diode model, when grain boundaries are present and active a four-diode model is required. Finally, we show results of the application of numerical simulations to the study of the cell degradation under damp heat stress conditions.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121894232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Study of the Wigner function boundary conditions at different barrier heights 不同势垒高度下Wigner函数边界条件的研究
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604539
Andrea Savio, A. Poncet
{"title":"Study of the Wigner function boundary conditions at different barrier heights","authors":"Andrea Savio, A. Poncet","doi":"10.1109/SISPAD.2010.5604539","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604539","url":null,"abstract":"In this work, we compute the Wigner function from wavefunctions obtained by solving the Schrödinger Equation. Our goal is to investigate issues that we encounter when simulating devices by solving the Wigner transport equation, namely the numerical discrepancies between the boundaries and the neighboring regions. In this paper, we focus on how the boundary conditions are affected by the barrier height in single- and double-barrier devices.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126085217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors 纳米MOS晶体管量化效应模拟的伪谱方法
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604499
A. Paussa, F. Conzatti, D. Breda, R. Vermiglio, D. Esseni
{"title":"Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors","authors":"A. Paussa, F. Conzatti, D. Breda, R. Vermiglio, D. Esseni","doi":"10.1109/SISPAD.2010.5604499","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604499","url":null,"abstract":"This paper presents a systematic comparison between the numerical efficiency of the pseudo-spectral (PS) and finite difference (FD) methods for the solution of eigenvalue problems related to both n and p-MOS transistors, with different geometries and carrier dimensionalities. Our results indicate remarkable advantages of the PS compared to the FD method in terms of CPU time.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116963771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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