硅双栅nmosfet的确定性多子带玻尔兹曼求解器的稳定实现

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604500

K. Zhao, Sung-Min Hong, C. Jungemann, Ru-Qi Han

{"title":"硅双栅nmosfet的确定性多子带玻尔兹曼求解器的稳定实现","authors":"K. Zhao, Sung-Min Hong, C. Jungemann, Ru-Qi Han","doi":"10.1109/SISPAD.2010.5604500","DOIUrl":null,"url":null,"abstract":"Silicon Double Gate nMOSFETs are simulated using a deterministic Boltzmann solver coupled with a 1D Schrödinger and 2D Poisson Equation. Subthreshold characteristics and high drain bias conditions can be well simulated by the solver stabilized by the H-transformation and the maximum entropy dissipation scheme.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs\",\"authors\":\"K. Zhao, Sung-Min Hong, C. Jungemann, Ru-Qi Han\",\"doi\":\"10.1109/SISPAD.2010.5604500\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon Double Gate nMOSFETs are simulated using a deterministic Boltzmann solver coupled with a 1D Schrödinger and 2D Poisson Equation. Subthreshold characteristics and high drain bias conditions can be well simulated by the solver stabilized by the H-transformation and the maximum entropy dissipation scheme.\",\"PeriodicalId\":331098,\"journal\":{\"name\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2010.5604500\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2010.5604500","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

硅双栅nmosfet的模拟使用确定性玻尔兹曼求解器与一维Schrödinger和二维泊松方程耦合。由h变换稳定的求解器和最大熵耗散方案可以很好地模拟亚阈值特性和高漏偏置条件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs

Silicon Double Gate nMOSFETs are simulated using a deterministic Boltzmann solver coupled with a 1D Schrödinger and 2D Poisson Equation. Subthreshold characteristics and high drain bias conditions can be well simulated by the solver stabilized by the H-transformation and the maximum entropy dissipation scheme.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 International Conference on Simulation of Semiconductor Processes and Devices

自引率

0.00%

发文量