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2010 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects 全带效应下SiGe HBTs传导带的球面谐波展开
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604540
G. Matz, Sung-Min Hong, C. Jungemann
{"title":"Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects","authors":"G. Matz, Sung-Min Hong, C. Jungemann","doi":"10.1109/SISPAD.2010.5604540","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604540","url":null,"abstract":"A SiGe HBT is simulated using a deterministic Boltzmann equation solver with full band effects. An anisotropic band structure fitted to full band for high energies significantly improves the simulation of SiGe HBTs with a spherical harmonics expansion solver, especially when it comes to breakdown voltages. This makes it a more efficient alternative to stochastic Monte Carlo simulation.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125312484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Solving Boltzmann Transport Equation without Monte-Carlo algorithms - new methods for industrial TCAD applications 不用蒙特卡罗算法求解玻尔兹曼输运方程——工业TCAD应用的新方法
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604501
B. Meinerzhagen, A. Pham, S.-M. Hong, C. Jungemann
{"title":"Solving Boltzmann Transport Equation without Monte-Carlo algorithms - new methods for industrial TCAD applications","authors":"B. Meinerzhagen, A. Pham, S.-M. Hong, C. Jungemann","doi":"10.1109/SISPAD.2010.5604501","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604501","url":null,"abstract":"The Drift-Diffusion model is still by far the most frequently used numerical device model in industry today. One important reason for this success is the robust numerical implementation of this model providing CPU efficient DC, AC, transient, and noise simulations with high accuracy and high convergence reliability. On the other hand, many of todays design applications vary strain, crystal and channel orientation, material composition, and the carrier confinement. Such applications certainly require the solution of the Boltzmann Transport Equation in order to be predictive. It will be demonstrated in this paper that with new alternative discretization and solution methods avoiding the Monte-Carlo algorithm many of the favorable numerical properties of the traditional Drift-Diffusion model can be transferred to numerical device models that include the solution of the Boltzmann Transport Equation.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129268236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Spin-transfer torques: Self-consistent solution of the spin-diffusion equation and the Landau-Lifshitz equation 自旋传递力矩:自旋扩散方程和Landau-Lifshitz方程的自洽解
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604577
S. Possanner, N. Ben Abdallah
{"title":"Spin-transfer torques: Self-consistent solution of the spin-diffusion equation and the Landau-Lifshitz equation","authors":"S. Possanner, N. Ben Abdallah","doi":"10.1109/SISPAD.2010.5604577","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604577","url":null,"abstract":"We present a numerical scheme that allows for the self-consistent treatment of the Landau-Lifshitz equation and the spin-diffusion equation in one space dimension. The scheme is used to simulate magnetic precessions in ferromagnet/normal-metal multilayers that are traversed by strong currents and results are compared to recent experimental observations. The good qualitative and quantitative agreement shows that the diffusive exchange-torque model proposed by Zhang et al. [8] is a legitimate alternative to the ballistic interface-torque model commonly used to describe magnetization dynamics in spin valves.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126974448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Topography simulation of BiCS memory hole etching modeled by elementary experiments of SiO2 and Si etching 基于SiO2和Si刻蚀基本实验的BiCS记忆孔刻蚀形貌模拟
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604576
Takashi Ichikawa, Daigo Ichinose, Kenji Kawabata, N. Tamaoki
{"title":"Topography simulation of BiCS memory hole etching modeled by elementary experiments of SiO2 and Si etching","authors":"Takashi Ichikawa, Daigo Ichinose, Kenji Kawabata, N. Tamaoki","doi":"10.1109/SISPAD.2010.5604576","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604576","url":null,"abstract":"A topography simulation of BiCS memory hole etching is performed. The model parameters are fitted by elementary experiments of Si and SiO2 etching, and BiCS topography simulation is performed without parameter fitting. Our new model describes the experimental topography of BiCS memory hole, including taper angles and undercuts of stacked films. The point of the modeling is that it takes into consideration removal of O-oriented deposition films by reflected ions from tapered SiO2 sidewall.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114857284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Fast DNA sequencing via transverse differential conductance 通过横向差分电导快速DNA测序
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604495
Yuhui He, R. Scheicher, A. Grigoriev, R. Ahuja, S. Long, Z. Ji, Zhaoan Yu, Ming Liu
{"title":"Fast DNA sequencing via transverse differential conductance","authors":"Yuhui He, R. Scheicher, A. Grigoriev, R. Ahuja, S. Long, Z. Ji, Zhaoan Yu, Ming Liu","doi":"10.1109/SISPAD.2010.5604495","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604495","url":null,"abstract":"We propose using characteristic transverse differential conductance for solid-state nanopore-based DNA sequencing and have explored this idea by performing molecular dynamics simulations on the translocation progress of single-stranded DNA molecule through the nanopore, and calculating the associated transverse differential conductance. Our results show that measurement of the transverse differential conductance is suitable to successfully discriminate between the four nucleotide types, and we show that this identification could even withstand electrical noise caused by fluctuations due to changes in the DNA orientation. Our findings demonstrate several compelling advantages of the differential conductance approach, which may lead to important applications in rapid genome sequencing.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124460447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Steep-slope nanowire field-effect transistor (SS-NWFET) 陡坡纳米线场效应晶体管
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604567
E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani
{"title":"Steep-slope nanowire field-effect transistor (SS-NWFET)","authors":"E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani","doi":"10.1109/SISPAD.2010.5604567","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604567","url":null,"abstract":"In this work we propose a novel device concept with nearly ideal switching properties: i) a sustained inverse switching-slope as small as 3 mV/dec at room temperature; ii) no appreciable degradation of the on-current and, iii) a large output conductance at low drain voltage, which represents an essential property for rail-to-rail switching in logic applications. These extraordinary properties could posibly be achieved by shaping the density of states in the conduction band so as to generate a first subband with a small energy extension, and a second subband widely displaced in energy, so that its contribution to the drain current is negligible. Computer simulations accounting for the idealized band structure depicted thus far confirm the steep-slope turn-on characteristics of this ideal device, and give an insight on the optimal band-structure parameters.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130182150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices 在半导体器件的确定性玻尔兹曼方程求解器中包含泡利原理
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604547
Sung-Min Hong, C. Jungemann
{"title":"Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices","authors":"Sung-Min Hong, C. Jungemann","doi":"10.1109/SISPAD.2010.5604547","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604547","url":null,"abstract":"The Pauli principle is included in a deterministic Boltzmann solver for multi-dimensional semiconductor devices. The Newton-Raphson scheme is applied to solve the nonlinear Boltzmann equation, and it is found that the inclusion of the Pauli principle introduces no numerical problems, even for semiconductor devices. The impact of the Pauli principle is numerically investigated for a scaled SiGe HBT.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131080735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Cost-effective variability reduction approaches to enable future technology nodes 具有成本效益的可变性减少方法，使未来的技术节点成为可能
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604553
A. Strojwas
{"title":"Cost-effective variability reduction approaches to enable future technology nodes","authors":"A. Strojwas","doi":"10.1109/SISPAD.2010.5604553","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604553","url":null,"abstract":"This paper will describe a comprehensive study of the primary sources of variability and their effects on active devices, interconnect and ultimately product performance and yield. We will first provide an overview of process variability sources and the resulting random and systematic variability down to 28nm. Next we will present the evolution of yield loss mechanisms and characterization methods for assessing process-design interactions with a focus on layout printability for 28nm and below. To overcome the impact of such a high level of variability on product performance, circuit designers should adopt advanced statistical process characterization, performance verification and optimization techniques. We will describe robust design methodology requirements based on statistical optimization approaches with realistic process/device characterization for logic, memory and analog circuits. We will then present an extremely regular layout methodology for 28nm and below. The key to the practical implementation of this methodology is the creation of a design fabric with a limited number of printability friendly patterns that enable the co-optimization of circuit, process and design. We will demonstrate that this methodology will enable future technology nodes utilizing current generation lithography while minimizing cost per good die.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130723111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Proposal of a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions 提出了一种适用于所有MOSFET工作区域的紧凑模型鉴定的拟合精度度量
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604513
H. Sakamoto, T. Iizuka
{"title":"Proposal of a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions","authors":"H. Sakamoto, T. Iizuka","doi":"10.1109/SISPAD.2010.5604513","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604513","url":null,"abstract":"Proposed is a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions. Fitting accuracy is quantified with a logarithmic deviation of simulated characteristics (such as current) from their measurement counterparts, normalized with the logarithmic deviation amplitude estimated with processs-kewed parameters (corner model). The use of this new metric successfully captures, in all MOSFET operation regions, a “hot spot” where fitting accuracy is compromised. With this knowledge, circuit designers would be able to take a necessary precaution by adding a right amount of margin on top of existing ones.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127634190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Proposal of a point-source model for highly-accurate analytical 3D calculation of ion implanted dopant profiles 提出了一种用于离子注入剂剖面高精度三维解析计算的点源模型
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604532
K. Nishi, M. Mochizuki, H. Hayashi, K. Fukuda, I. Kurachi
{"title":"Proposal of a point-source model for highly-accurate analytical 3D calculation of ion implanted dopant profiles","authors":"K. Nishi, M. Mochizuki, H. Hayashi, K. Fukuda, I. Kurachi","doi":"10.1109/SISPAD.2010.5604532","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604532","url":null,"abstract":"A point-source model of ion implantation for 3D simulation is proposed for the first time. Implanted ion profile is calculated by integrals, over implanted surface, of point-source implanted profiles which are calculated by a well-tuned Monte Carlo simulation and are then reconstructed by analytical functions considering various channeling directions. The significance of the proposed model is demonstrated by remarkable accuracy of lateral profiles along the masked surface.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131246676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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