提出了一种用于离子注入剂剖面高精度三维解析计算的点源模型

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604532

K. Nishi, M. Mochizuki, H. Hayashi, K. Fukuda, I. Kurachi

{"title":"提出了一种用于离子注入剂剖面高精度三维解析计算的点源模型","authors":"K. Nishi, M. Mochizuki, H. Hayashi, K. Fukuda, I. Kurachi","doi":"10.1109/SISPAD.2010.5604532","DOIUrl":null,"url":null,"abstract":"A point-source model of ion implantation for 3D simulation is proposed for the first time. Implanted ion profile is calculated by integrals, over implanted surface, of point-source implanted profiles which are calculated by a well-tuned Monte Carlo simulation and are then reconstructed by analytical functions considering various channeling directions. The significance of the proposed model is demonstrated by remarkable accuracy of lateral profiles along the masked surface.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Proposal of a point-source model for highly-accurate analytical 3D calculation of ion implanted dopant profiles\",\"authors\":\"K. Nishi, M. Mochizuki, H. Hayashi, K. Fukuda, I. Kurachi\",\"doi\":\"10.1109/SISPAD.2010.5604532\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A point-source model of ion implantation for 3D simulation is proposed for the first time. Implanted ion profile is calculated by integrals, over implanted surface, of point-source implanted profiles which are calculated by a well-tuned Monte Carlo simulation and are then reconstructed by analytical functions considering various channeling directions. The significance of the proposed model is demonstrated by remarkable accuracy of lateral profiles along the masked surface.\",\"PeriodicalId\":331098,\"journal\":{\"name\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2010.5604532\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2010.5604532","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

首次提出了用于三维模拟的离子注入点源模型。注入离子分布是通过对注入表面上的点源注入离子分布进行积分来计算的，这些注入离子分布是通过良好调谐的蒙特卡罗模拟计算得到的，然后通过考虑各种通道方向的解析函数来重建。该模型的重要意义由沿被遮挡表面的侧向轮廓的显著精度证明。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Proposal of a point-source model for highly-accurate analytical 3D calculation of ion implanted dopant profiles

A point-source model of ion implantation for 3D simulation is proposed for the first time. Implanted ion profile is calculated by integrals, over implanted surface, of point-source implanted profiles which are calculated by a well-tuned Monte Carlo simulation and are then reconstructed by analytical functions considering various channeling directions. The significance of the proposed model is demonstrated by remarkable accuracy of lateral profiles along the masked surface.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 International Conference on Simulation of Semiconductor Processes and Devices

自引率

0.00%

发文量