全带效应下SiGe HBTs传导带的球面谐波展开

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604540

G. Matz, Sung-Min Hong, C. Jungemann

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引用次数: 2

摘要

利用具有全带效应的确定性玻尔兹曼方程求解器模拟了SiGe HBT。适用于高能量全带的各向异性带结构显著改善了球面谐波展开求解器对SiGe hbt的模拟，特别是在击穿电压方面。这使得它比随机蒙特卡罗模拟更有效。

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Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects

A SiGe HBT is simulated using a deterministic Boltzmann equation solver with full band effects. An anisotropic band structure fitted to full band for high energies significantly improves the simulation of SiGe HBTs with a spherical harmonics expansion solver, especially when it comes to breakdown voltages. This makes it a more efficient alternative to stochastic Monte Carlo simulation.

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2010 International Conference on Simulation of Semiconductor Processes and Devices

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