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2010 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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Improving the accuracy of the Schrödinger-Poisson solution in CNWs and CNTs 提高Schrödinger-Poisson溶液在cnw和CNTs中的准确性
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604497
M. Rudan, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani
{"title":"Improving the accuracy of the Schrödinger-Poisson solution in CNWs and CNTs","authors":"M. Rudan, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani","doi":"10.1109/SISPAD.2010.5604497","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604497","url":null,"abstract":"The Schrödinger equation, or the coupled Schrödinger and Poisson equations, are transformed into an integral equation. Back-substituting from the original equations allows one to approximate the numerical corrections to any order without the need of calculating derivatives of the unknown function of order larger than one. Typical applications are in the numerical analysis of quantum transport in nanowires and nanotubes in the ballistic regime.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130559346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modeling of NQS effects in carbon nanotube transistors 碳纳米管晶体管NQS效应的建模
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604527
M. Claus, S. Mothes, M. Schroter
{"title":"Modeling of NQS effects in carbon nanotube transistors","authors":"M. Claus, S. Mothes, M. Schroter","doi":"10.1109/SISPAD.2010.5604527","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604527","url":null,"abstract":"Time-dependent quantum simulations are used to rigorously identify non-quasi-static (NQS) effects in Carbon nanotube transistors. A complete physics-based small signal equivalent circuit is derived which captures important NQS effects for circuit design and simulation. This model agrees well with high-frequency measurements. Additionally, the impact of Schottky barriers on the kinetic inductance and the charging resistances is discussed and the role of the contact resistances is investigated.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125322882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Detailed physical simulation of program disturb mechanisms in Sub-50 nm NAND flash memory strings Sub-50 nm NAND闪存串中程序干扰机制的详细物理模拟
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604512
C. D. Nguyen, A. Kuligk, M. Vexler, M. Klawitter, V. Beyer, T. Melde, M. Czernohorsky, B. Meinerzhagen
{"title":"Detailed physical simulation of program disturb mechanisms in Sub-50 nm NAND flash memory strings","authors":"C. D. Nguyen, A. Kuligk, M. Vexler, M. Klawitter, V. Beyer, T. Melde, M. Czernohorsky, B. Meinerzhagen","doi":"10.1109/SISPAD.2010.5604512","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604512","url":null,"abstract":"The hot electron induced mechanism disturbing the stored information in inhibited bit lines during the programming of nonvolatile memories with NAND architecture is studied in detail using a new dedicated advanced physical simulation scheme for the first time.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129418101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines 干式蚀刻多晶硅栅极线的设备模拟与特征尺度轮廓模拟耦合
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI: 10.1109/SISPAD.2010.5604571
E. Baer, D. Kunder, P. Evanschitzky, J. Lorenz
{"title":"Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines","authors":"E. Baer, D. Kunder, P. Evanschitzky, J. Lorenz","doi":"10.1109/SISPAD.2010.5604571","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604571","url":null,"abstract":"We demonstrate the coupling of plasma reactor equipment simulation and feature-scale profile simulation for dry etching of silicon in a chlorine plasma. Equipment simulation delivers fluxes of ions and neutrals, as well as the angular characteristics of the ions. These quantities are fed into a feature-scale simulator based on a Monte Carlo approach for determining relevant quantities on the feature surface, i.e. the concentration of adsorbed neutrals and the number of removed silicon atoms due to chemical sputtering. Using the coupled simulation system, we are able to study the influence of equipment parameters on the resulting etching profiles. As an example, we show the etching of polysilicon for gate formation and determine profile variations according to different positions on the wafer and according to varying bias applied to the substrate in the etching reactor.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122205568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Modeling of the voltage snap-back in amorphous-GST memory devices 非晶gst存储器件电压回跳的建模
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-09-01 DOI: 10.1109/SISPAD.2010.5604511
M. Rudan, F. Giovanardi, T. Tsafack, F. Xiong, E. Piccinini, F. Buscemi, A. Liao, E. Pop, R. Brunetti, C. Jacoboni
{"title":"Modeling of the voltage snap-back in amorphous-GST memory devices","authors":"M. Rudan, F. Giovanardi, T. Tsafack, F. Xiong, E. Piccinini, F. Buscemi, A. Liao, E. Pop, R. Brunetti, C. Jacoboni","doi":"10.1109/SISPAD.2010.5604511","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604511","url":null,"abstract":"Charge transport in amorphous chalcogenide-GST used for memory devices is modeled by means of two contributions: hopping of trapped electrons and motion of band electrons. Field-induced emission is accounted for as the mechanism mainly responsible for the trap-to-band transitions. The experimental snap-back behavior of the I(V) curves is reproduced even in the simple case of one-dimensional, uniform structures as the one considered in the paper.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121320250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A simple and efficient method for the calculation of carrier-carrier scattering in Monte-Carlo simulations 蒙特卡罗模拟中载流子-载流子散射的一种简单有效的计算方法
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-09-01 DOI: 10.1109/SISPAD.2010.5604550
Wonsok Lee, Umberto Ravaioli
{"title":"A simple and efficient method for the calculation of carrier-carrier scattering in Monte-Carlo simulations","authors":"Wonsok Lee, Umberto Ravaioli","doi":"10.1109/SISPAD.2010.5604550","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604550","url":null,"abstract":"The analysis of the carrier-carrier scattering is getting more important and it can be done by the particle-particle-particle-mesh (P3M) algorithm. A problematic part of the algorithm is to avoid double-counting of the pair forces in short-range. Here, we solve the problem by introducing an efficient numerical method to the algorithm. The improvements in accuracy and applicability are confirmed with various test cases. In addition, the modified P3M method is integrated with a 3D ensemble Monte Carlo (EMC) simulator and applied to the device simulations. The results are compared with those of the PM (particle-mesh)-EMC approach, which reveals the limitations of the scattering rate based methods and the importance of the P3M method to treat carrier interactions.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134460678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Coupling of Monte Carlo sputter simulation and feature-scale profile simulation and application to the simulation of back etching of an intermetal dielectric 蒙特卡罗溅射模拟与特征尺度轮廓模拟的耦合及其在金属间介质背蚀刻模拟中的应用
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-09-01 DOI: 10.1109/SISPAD.2010.5604574
E. Baer, D. Kunder, J. Lorenz, M. Sekowski, U. Paschen
{"title":"Coupling of Monte Carlo sputter simulation and feature-scale profile simulation and application to the simulation of back etching of an intermetal dielectric","authors":"E. Baer, D. Kunder, J. Lorenz, M. Sekowski, U. Paschen","doi":"10.1109/SISPAD.2010.5604574","DOIUrl":"https://doi.org/10.1109/SISPAD.2010.5604574","url":null,"abstract":"We demonstrate the coupling of Monte Carlo sputter simulation with feature-scale simulation of profile evolution during sputter etching. With the Monte Carlo sputter simulation, the dependence of the sputter yield on the angle of incidence and on the energy of ions impinging onto the surface is determined. The yield curves obtained thereby are fed into a feature-scale etching profile simulator which predicts the local etch rates based on these sputter yield curves and on ion fluxes which are calculated for a substrate placed in a sputter reactor. For validating the simulations, a process sequence consisting of deposition and back etching (in an argon plasma) of silicon oxide between metal lines has been studied. Assuming an ion energy of 250 eV allows us to consistently reproduce profiles observed experimentally.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134026061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Session 07-A invited 第07-A部分邀请
2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 1900-01-01 DOI: 10.1109/sispad.2010.5604556
T. Grasser
{"title":"Session 07-A invited","authors":"T. Grasser","doi":"10.1109/sispad.2010.5604556","DOIUrl":"https://doi.org/10.1109/sispad.2010.5604556","url":null,"abstract":"","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115947148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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