Modeling of NQS effects in carbon nanotube transistors

Abstract

Time-dependent quantum simulations are used to rigorously identify non-quasi-static (NQS) effects in Carbon nanotube transistors. A complete physics-based small signal equivalent circuit is derived which captures important NQS effects for circuit design and simulation. This model agrees well with high-frequency measurements. Additionally, the impact of Schottky barriers on the kinetic inductance and the charging resistances is discussed and the role of the contact resistances is investigated.