碳纳米管晶体管NQS效应的建模

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604527

M. Claus, S. Mothes, M. Schroter

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引用次数: 4

摘要

时间相关的量子模拟用于严格识别碳纳米管晶体管中的非准静态(NQS)效应。推导了一个完整的基于物理的小信号等效电路，该电路捕捉到了NQS对电路设计和仿真的重要影响。该模型与高频测量结果吻合良好。此外，还讨论了肖特基势垒对动态电感和充电电阻的影响，并研究了接触电阻的作用。

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Modeling of NQS effects in carbon nanotube transistors

Time-dependent quantum simulations are used to rigorously identify non-quasi-static (NQS) effects in Carbon nanotube transistors. A complete physics-based small signal equivalent circuit is derived which captures important NQS effects for circuit design and simulation. This model agrees well with high-frequency measurements. Additionally, the impact of Schottky barriers on the kinetic inductance and the charging resistances is discussed and the role of the contact resistances is investigated.

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2010 International Conference on Simulation of Semiconductor Processes and Devices

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