具有成本效益的可变性减少方法,使未来的技术节点成为可能

A. Strojwas
{"title":"具有成本效益的可变性减少方法,使未来的技术节点成为可能","authors":"A. Strojwas","doi":"10.1109/SISPAD.2010.5604553","DOIUrl":null,"url":null,"abstract":"This paper will describe a comprehensive study of the primary sources of variability and their effects on active devices, interconnect and ultimately product performance and yield. We will first provide an overview of process variability sources and the resulting random and systematic variability down to 28nm. Next we will present the evolution of yield loss mechanisms and characterization methods for assessing process-design interactions with a focus on layout printability for 28nm and below. To overcome the impact of such a high level of variability on product performance, circuit designers should adopt advanced statistical process characterization, performance verification and optimization techniques. We will describe robust design methodology requirements based on statistical optimization approaches with realistic process/device characterization for logic, memory and analog circuits. We will then present an extremely regular layout methodology for 28nm and below. The key to the practical implementation of this methodology is the creation of a design fabric with a limited number of printability friendly patterns that enable the co-optimization of circuit, process and design. We will demonstrate that this methodology will enable future technology nodes utilizing current generation lithography while minimizing cost per good die.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Cost-effective variability reduction approaches to enable future technology nodes\",\"authors\":\"A. Strojwas\",\"doi\":\"10.1109/SISPAD.2010.5604553\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper will describe a comprehensive study of the primary sources of variability and their effects on active devices, interconnect and ultimately product performance and yield. We will first provide an overview of process variability sources and the resulting random and systematic variability down to 28nm. Next we will present the evolution of yield loss mechanisms and characterization methods for assessing process-design interactions with a focus on layout printability for 28nm and below. To overcome the impact of such a high level of variability on product performance, circuit designers should adopt advanced statistical process characterization, performance verification and optimization techniques. We will describe robust design methodology requirements based on statistical optimization approaches with realistic process/device characterization for logic, memory and analog circuits. We will then present an extremely regular layout methodology for 28nm and below. The key to the practical implementation of this methodology is the creation of a design fabric with a limited number of printability friendly patterns that enable the co-optimization of circuit, process and design. We will demonstrate that this methodology will enable future technology nodes utilizing current generation lithography while minimizing cost per good die.\",\"PeriodicalId\":331098,\"journal\":{\"name\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2010.5604553\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2010.5604553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文将全面研究可变性的主要来源及其对有源器件、互连和最终产品性能和良率的影响。我们将首先概述工艺可变性来源以及由此产生的随机和系统可变性,直至28nm。接下来,我们将介绍产率损失机制的演变和表征方法,以评估工艺设计相互作用,重点关注28nm及以下的布局可印刷性。为了克服如此高水平的可变性对产品性能的影响,电路设计者应该采用先进的统计工艺表征、性能验证和优化技术。我们将描述基于统计优化方法的稳健设计方法要求,并具有逻辑,内存和模拟电路的实际过程/器件特性。然后,我们将提出一种极其规则的28nm及以下的布局方法。该方法实际实施的关键是创建具有有限数量的可印刷性友好模式的设计结构,从而实现电路、工艺和设计的共同优化。我们将证明这种方法将使未来的技术节点利用当前一代光刻技术,同时最大限度地降低每个好芯片的成本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cost-effective variability reduction approaches to enable future technology nodes
This paper will describe a comprehensive study of the primary sources of variability and their effects on active devices, interconnect and ultimately product performance and yield. We will first provide an overview of process variability sources and the resulting random and systematic variability down to 28nm. Next we will present the evolution of yield loss mechanisms and characterization methods for assessing process-design interactions with a focus on layout printability for 28nm and below. To overcome the impact of such a high level of variability on product performance, circuit designers should adopt advanced statistical process characterization, performance verification and optimization techniques. We will describe robust design methodology requirements based on statistical optimization approaches with realistic process/device characterization for logic, memory and analog circuits. We will then present an extremely regular layout methodology for 28nm and below. The key to the practical implementation of this methodology is the creation of a design fabric with a limited number of printability friendly patterns that enable the co-optimization of circuit, process and design. We will demonstrate that this methodology will enable future technology nodes utilizing current generation lithography while minimizing cost per good die.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信