Proposal of a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions

Proposed is a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions. Fitting accuracy is quantified with a logarithmic deviation of simulated characteristics (such as current) from their measurement counterparts, normalized with the logarithmic deviation amplitude estimated with processs-kewed parameters (corner model). The use of this new metric successfully captures, in all MOSFET operation regions, a “hot spot” where fitting accuracy is compromised. With this knowledge, circuit designers would be able to take a necessary precaution by adding a right amount of margin on top of existing ones.