{"title":"不同势垒高度下Wigner函数边界条件的研究","authors":"Andrea Savio, A. Poncet","doi":"10.1109/SISPAD.2010.5604539","DOIUrl":null,"url":null,"abstract":"In this work, we compute the Wigner function from wavefunctions obtained by solving the Schrödinger Equation. Our goal is to investigate issues that we encounter when simulating devices by solving the Wigner transport equation, namely the numerical discrepancies between the boundaries and the neighboring regions. In this paper, we focus on how the boundary conditions are affected by the barrier height in single- and double-barrier devices.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of the Wigner function boundary conditions at different barrier heights\",\"authors\":\"Andrea Savio, A. Poncet\",\"doi\":\"10.1109/SISPAD.2010.5604539\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we compute the Wigner function from wavefunctions obtained by solving the Schrödinger Equation. Our goal is to investigate issues that we encounter when simulating devices by solving the Wigner transport equation, namely the numerical discrepancies between the boundaries and the neighboring regions. In this paper, we focus on how the boundary conditions are affected by the barrier height in single- and double-barrier devices.\",\"PeriodicalId\":331098,\"journal\":{\"name\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2010.5604539\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2010.5604539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of the Wigner function boundary conditions at different barrier heights
In this work, we compute the Wigner function from wavefunctions obtained by solving the Schrödinger Equation. Our goal is to investigate issues that we encounter when simulating devices by solving the Wigner transport equation, namely the numerical discrepancies between the boundaries and the neighboring regions. In this paper, we focus on how the boundary conditions are affected by the barrier height in single- and double-barrier devices.