Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors

Abstract

This paper presents a systematic comparison between the numerical efficiency of the pseudo-spectral (PS) and finite difference (FD) methods for the solution of eigenvalue problems related to both n and p-MOS transistors, with different geometries and carrier dimensionalities. Our results indicate remarkable advantages of the PS compared to the FD method in terms of CPU time.