III-V异质结构mosfet的优化设计

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604557

A. Nainani, Ze Yuan, T. Krishnamohan, K. Saraswat

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引用次数: 6

摘要

Sb基材料提供适合异质结构设计的大VBO/CBO。通过智能地使用调制掺杂可以克服InGaAs/InP NMOS的小CBO。TCAP=1nm的异质结构设计可以降低Dit的影响(图11)，导致BTBT降低一个数量级(图13)，IDsat提高100/50%(图14)，同时在亚阈值摆幅和DIBL方面保持良好的静电控制(图11)。

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Optimal design of III–V heterostructure MOSFETs

Sb based materials offer large VBO/CBO suitable for heterostructure design. The small CBO for InGaAs/InP NMOS can be overcome by intelligent use of modulation doping. A heterostructure design with TCAP=1nm can reduce the effect of Dit (Fig. 11), lead to an order of magnitude reduction in BTBT (Fig. 13) and a 100/50% improvement in the IDsat (Fig. 14) while maintaining good electrostatic control in terms of subthreshold swing and DIBL (Fig. 11).

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2010 International Conference on Simulation of Semiconductor Processes and Devices

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